Inelastic neutron scattering measurements on the molecular dimer-Mott insulator κ-(BEDT-TTF)_{2}Cu[N(CN)_{2}]Cl reveal a phonon anomaly in a wide temperature range. Starting from T_{ins}∼50-60 K where the charge gap opens, the low-lying optical phonon modes become overdamped upon cooling towards the antiferromagnetic ordering temperature T_{N}=27 K, where also a ferroelectric ordering at T_{FE}≈T_{N} occurs. Conversely, the phonon damping becomes small again when spins and charges are ordered below T_{N}, while no change of the lattice symmetry is observed across T_{N} in neutron diffraction measurements.
View Article and Find Full Text PDFExtensive quasielastic neutron scattering measurements have been used to directly observe oxide ion dynamics on the nanosecond time scale in bismuth vanadate with formula BiVO, which exhibits remarkable oxide ion conductivity at low temperatures. This is the longest time scale neutron scattering study of any fluorite-type solid electrolyte, and it represents only the second case of oxide ion dynamics in any material observed on a nanosecond time scale by quasielastic neutron scattering. Ab initio molecular dynamics simulations reveal two mechanisms that contribute to the oxide ion dynamics in the material: a slower diffusion process through the Bi-O sublattice and a faster process which corresponds to more localized dynamics of the oxide ions within the VO coordination spheres.
View Article and Find Full Text PDFPeriodic DFT calculations allow an understanding of the strong orientation-dependent Raman spectra of oriented CaFeO2.5 single crystals. Modes involving the oscillation of the apical oxygen (O(ap)) atoms perturb the induced electric dipoles.
View Article and Find Full Text PDFThe structural and electronic properties of silica-supported titanium chloride tetrahydrofuranates samples, obtained by impregnating a polymer-grade dehydroxylated silica with TiCl4(thf)2 and TiCl3(thf)3 complexes, precursors of Ziegler-Natta catalysts, are investigated by means of FT-IR, XAS, XES and diffuse reflectance UV-Vis spectroscopy, coupled with DFT calculations. The properties of the two silica-supported samples are very similar, irrespective of the starting precursor. In both cases, most of the chlorine ligands originally surrounding the Ti sites are substituted by oxygen ligands upon grafting on silica.
View Article and Find Full Text PDFIn the past few years, strong efforts have been devoted to improving the frequency of optical-fiber communications. In particular, the use of a special kind of integrated optoelectronic device called an electroabsorption modulated laser (EML) allows communication at 10 Gb s(-1) or higher over long propagation spans (up to 80 km). Such devices are realized using the selective area growth (SAG) technique and are based on a multiple quantum well (MQW) distributed-feedback laser (DFB) monolithically integrated with a MQW electroabsorption modulator (EAM).
View Article and Find Full Text PDFThe preparation by the deposition-precipitation method (using Na(2)PdCl(4) as a palladium precursor and Na(2)CO(3) as a basic agent) of Pd catalysts supported on gamma-Al(2)O(3) and on two different types of active carbons has been followed by several techniques (UV-vis, EXAFS, XRPD, and TPR). This work consists of four successive parts: the investigation of (i) the palladium precursor liquid solution (in the absence of substrate), (ii) the solid precipitated phase (in the absence of substrate), (iii) the precipitated Pd(2+)-phase on the supports as a function of Pd loading from 0.5 to 5.
View Article and Find Full Text PDFDirect evidence is reported of structural and electronic effects induced on a single Bi(2)Sr(2)CaCu(2)O(8+delta) (Bi-2212) whisker during a progressive annealing process. The crystal was investigated by micro X-ray diffraction (micro-XRD), micro X-ray fluorescence and electrical characterization at the European Synchrotron Radiation Facility, during a series of three in situ thermal processes at 363 K. Each step increased the sample resistivity and decreased its critical temperature, up to a semiconducting behaviour.
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