Status of Aluminum Oxide Gate Dielectric Technology for Insulated-Gate GaN-Based Devices.

Insulated-gate GaN-based transistors can fulfill the emerging demands for the future generation of highly efficient electronics for high-frequency, high-power and high-temperature applications. However, in contrast to Si-based devices, the introduction of an insulator on (Al)GaN is complicated by the absence of a high-quality native oxide for GaN. Trap states located at the insulator/(Al)GaN interface and within the dielectric can strongly affect the device performance.

SDVSRM - a new SSRM based technique featuring dynamically adjusted, scanner synchronized sample voltages for measurement of actively operated devices.

Scanning spreading resistance microscopy (SSRM) with its high spatial resolution and high dynamic signal range is a powerful tool for two-dimensional characterization of semiconductor dopant areas. However, the application of the method is limited to devices in equilibrium condition, as the investigation of actively operated devices would imply potential differences within the device, whereas SSRM relies on a constant voltage difference between sample surface and probe tip. Furthermore, the standard preparation includes short circuiting of all device components, limiting applications to devices in equilibrium condition.

Tuning fulleride electronic structure and molecular ordering via variable layer index.

C60 fullerides are uniquely flexible molecular materials that exhibit a rich variety of behaviour, including superconductivity and magnetism in bulk compounds, novel electronic and orientational phases in thin films and quantum transport in a single-C60 transistor. The complexity of fulleride properties stems from the existence of many competing interactions, such as electron-electron correlations, electron-vibration coupling and intermolecular hopping. The exact role of each interaction is controversial owing to the difficulty of experimentally isolating the effects of a single interaction in the intricate fulleride materials.