Guanine-based spin valve with spin rectification effect for an artificial memory element.

Non-volatile electronic memory elements are very attractive for applications, not only for information storage but also in logic circuits, sensing devices and neuromorphic computing. Here, a ferroelectric film of guanine nucleobase is used in a resistive memory junction sandwiched between two different ferromagnetic films of Co and CoCr alloys. The magnetic films have an in-plane easy axis of magnetization and different coercive fields whereas the guanine film ensures a very long spin transport length, at 100 K.

Electro-active properties of nanostructured films of cytosine and guanine nucleobases.

The discovery of multifunctional properties related to electro-activity of organic systems of biomolecules is important for a variety of applications, especially for devices in the realm of biocompatible sensors and/or bioactuators. A further step towards such applications is to prepare thin films with the required properties. Here, the investigation is focused on the characterization of films of guanine and cytosine nucleobases, prepared by thermal evaporation-an industrial accessible deposition technique.