Passive Q switching of Yb:CNGS lasers by Cr:YAG and V:YAG saturable absorbers.

Trigonal langasite-type ordered silicate crystal : (Yb:CNGS) is a promising material for efficient ∼1   lasers. We report on the first passively -switched Yb:CNGS laser using : and : saturable absorbers (SAs) with a 976 nm volume-Bragg-grating-stabilized diode as a pump source. The laser crystal was a cut 3 at.

Graphene Q-switched Er,Yb:GdAl(BO) laser at 1550 nm.

A single-layer graphene saturable absorber is employed for passive Q-switching of an Er, Yb:GdAl(BO) (Er,Yb:GdAB) compact laser, representing the first Er-doped oxoborate laser Q-switched by graphene. This laser is based on a c-cut 1.8 at.

Subnanosecond Tm:KLuW microchip laser Q-switched by a Cr:ZnS saturable absorber.

Passive Q-switching of a compact Tm:KLu(WO(4))(2) microchip laser diode pumped at 805 nm is demonstrated with a polycrystalline Cr(2+):ZnS saturable absorber. This laser generates subnanosecond (780 ps) pulses with a pulse repetition frequency of 5.6 kHz at 1846.