Properties of Doped GaSb Whiskers at Low Temperatures.

Temperature dependencies of GaSb whiskers' resistance doped with Te to concentration of 1.7 × 10 cm were measured in temperature range 1.5-300 K.

Silicon Nanostructures Produced by Modified MacEtch Method for Antireflective Si Surface.

This work pertains to the method for modification of silicon (Si) wafer morphology by metal-assisted chemical etching (MacEtch) technique suitable for fabrication of antireflective Si surfaces. For this purpose, we made different Au catalyst patterns on the surface of Si substrate. This modification allowed to obtain the close-packed Au nanodrop (ND) pattern that generates the nanowires (NWs) and the well-separated Au NDs, which induce the nanopore (NP) formation.

Nanoscale Conductive Channels in Silicon Whiskers with Nickel Impurity.

The magnetization and magnetoresistance of Si whiskers doped with to boron concentrations corresponding to the metal-insulator transition (2 × 10 cm ÷ 5 × 10 cm) were measured at high magnetic fields up to 14 T in a wide temperature range 4.2-300 K. Hysteresis of the magnetic moment was observed for Si p-type whiskers with nickel impurity in a wide temperature range 4.