Stable and scalable 1T MoS with low temperature-coefficient of resistance.

Monolithic realization of metallic 1T and semiconducting 2H phases makes MoS a potential candidate for future microelectronic circuits. A method for engineering a stable 1T phase from the 2H phase in a scalable manner and an in-depth electrical characterization of the 1T phase is wanting at large. Here we demonstrate a controllable and scalable 2H to 1T phase engineering technique for MoS using microwave plasma.