Miniaturized nanoelectrospray interface for coupling capillary electrophoresis with mass spectrometry detection.

A miniaturized electrospray interface consisting of a microfluidic nanosprayer and nanospray module is reported in the presented short communication. The nanosprayer was fabricated using silicon (Si) technology suitable for cost-efficient high-volume mass production. The nanospray module enabled the positioning of the nanosprayer in front of a mass spectrometry entrance and its coupling with capillary electrophoresis based on the liquid junction principle.

UV-Nanoimprint and Deep Reactive Ion Etching of High Efficiency Silicon Metalenses: High Throughput at Low Cost with Excellent Resolution and Repeatability.

As metasurfaces begin to find industrial applications there is a need to develop scalable and cost-effective fabrication techniques which offer sub-100 nm resolution while providing high throughput and large area patterning. Here we demonstrate the use of UV-Nanoimprint Lithography and Deep Reactive Ion Etching (Bosch and Cryogenic) towards this goal. Robust processes are described for the fabrication of silicon rectangular pillars of high pattern fidelity.

MEMS-tunable dielectric metasurface lens using thin-film PZT for large displacements at low voltages.

Tunable focusing is a desired property in a wide range of optical imaging and sensing technologies but has tended to require bulky components that cannot be integrated on-chip and have slow actuation speeds. Recently, integration of metasurfaces into electrostatic micro-electromechanical system (MEMS) architectures has shown potential to overcome these challenges but has offered limited out-of-plane displacement range while requiring large voltages. We demonstrate for the first time, to the best of our knowledge, a movable metasurface lens actuated by integrated thin-film PZT MEMS, which has the advantage of offering large displacements at low voltages.

High Performance Predictable Quantum Efficient Detector Based on Induced-Junction Photodiodes Passivated with SiO/SiN.

We performed a systematic study involving simulation and experimental techniques to develop induced-junction silicon photodetectors passivated with thermally grown SiO and plasma-enhanced chemical vapor deposited (PECVD) SiN thin films that show a record high quantum efficiency. We investigated PECVD SiN passivation and optimized the film deposition conditions to minimize the recombination losses at the silicon-dielectric interface as well as optical losses. Depositions with varied process parameters were carried out on test samples, followed by measurements of minority carrier lifetime, fixed charge density, and optical absorbance and reflectance.