Radiation attenuation parameters and intrinsic efficiency of a few semiconductor crystals for radiation detection applications.

This study investigates the effectiveness of nine inorganic semiconductor crystals - LiGaSe, LiInSe, CsHgInS, SnS, GaTe, BiI, SbTe, TlCdI, and TlBr - for radiation detection applications based on photon and charged particle (electrons, protons, and heavy ions) interaction parameters. Mass attenuation coefficient (μ/ρ), half value layer (HVL), relaxation length (λ), effective atomic number (Z), electron density (N), equivalent atomic number (Z), and exposure buildup factor (EBF) were computed using PAGEX software. These results, along with their intrinsic efficiencies calculated, were compared with that of standard materials (NaI(Tl), CdZnTe, and CdTe).