Electronic Properties of ZnVNbN Alloys to Model Novel Materials for Light-Emitting Diodes.

We propose the ZnVNbN alloy as a new promising material for optoelectronic applications, in particular for light-emitting diodes (LEDs). We perform accurate electronic-structure calculations of the alloy for several concentrations using density-functional theory with meta-GGA exchange-correlation functional TB09. The band gap is found to vary between 2.