Energy Efficient Memristor Based on Green-Synthesized 2D Carbonyl-Decorated Organic Polymer and Application in Image Denoising and Edge Detection: Toward Sustainable AI.

According to the United Nations, around 53 million metric tons of electronic waste is produced every year, worldwide, the big majority of which goes unprocessed. With the rapid advances in AI technologies and adoption of smart gadgets, the demand for powerful logic and memory chips is expected to boom. Therefore, the development of green electronics is crucial to minimizing the impact of the alarmingly increasing e-waste.

Nano-scale charge trapping memory based on two-dimensional conjugated microporous polymer.

There is a growing interest in new semiconductor nanostructures for future high-density high-performance flexible electronic devices. Two-dimensional conjugated microporous polymers (2D-CMPs) are promising candidates because of their inherent optoelectronic properties. Here, we are reporting a novel donor-acceptor type 2D-CMP based on Pyrene and Isoindigo (PI) for a potential nano-scale charge-trapping memory application.

A Rational Design of Isoindigo-Based Conjugated Microporous n-Type Semiconductors for High Electron Mobility and Conductivity.

The development of n-type organic semiconductors has evolved significantly slower in comparison to that of p-type organic semiconductors mainly due to the lack of electron-deficient building blocks with stability and processability. However, to realize a variety of organic optoelectronic devices, high-performance n-type polymer semiconductors are essential. Herein, conjugated microporous polymers (CMPs) comprising isoindigo acceptor units linked to benzene or pyrene donor units (BI and PI) showing n-type semiconducting behavior are reported.

Artificial visual perception neural system using a solution-processable MoS-based in-memory light sensor.

Optoelectronic devices are advantageous in in-memory light sensing for visual information processing, recognition, and storage in an energy-efficient manner. Recently, in-memory light sensors have been proposed to improve the energy, area, and time efficiencies of neuromorphic computing systems. This study is primarily focused on the development of a single sensing-storage-processing node based on a two-terminal solution-processable MoS metal-oxide-semiconductor (MOS) charge-trapping memory structure-the basic structure for charge-coupled devices (CCD)-and showing its suitability for in-memory light sensing and artificial visual perception.

Utilizing trapped charge at bilayer 2D MoS/SiOinterface for memory applications.

In this work we use conductive atomic force microscopy (cAFM) to study the charge injection process from a nanoscale tip to a single isolated bilayer 2D MoSflake. The MoSis exfoliated and bonded to ultra-thin SiO/Si substrate. Local current-voltage () measurements conducted by cAFM provides insight in charge trapping/de-trapping mechanisms at the MoS/SiOinterface.

Mechanical characterization and optical microscopy of homemade slime and the effect of some common household products.

In this work, we demonstrate the synthesis of homemade slime and investigate how adding different household chemicals such as shaving cream and clay affects the chemical properties and hence the mechanical behavior. The purpose of this study is to instill scientific curiosity in young learners by establishing a relationship between a material's chemical structure and its mechanical properties. Eight types of slime were studied: basic slime (borax with glue), slime with the addition of: (a) shaving cream, (b) clay, (c) shaving cream and clay together, (d) baking soda, (e) cornstarch, (f) hand soap, and (g) toothpaste.

Time dependence of electrical characteristics during the charge decay from a single gold nanoparticle on silicon.

In this work, we investigate the time dependence of trapped charge in isolated gold nanoparticles (Au-NPS) dispersed on n-Si substrates, based on the electrical characteristics of nano metal-semiconductor junctions. The current-voltage (-) characteristics have been analysed on a single Au-NP at different time intervals, using conductive mode atomic force microscopy (AFM). The Au-NPs have been characterized for their morphology and optical properties using transmission electron microscopy (TEM), ultraviolet visible (UV-vis) spectroscopy and scanning electron microscopy (SEM).

Author Correction: Photodetection Characteristics of Gold Coated AFM Tips and n-Silicon Substrate nano-Schottky Interfaces.

An amendment to this paper has been published and can be accessed via a link at the top of the paper.

Improved figures of merit of nano-Schottky diode by embedding and characterizing individual gold nanoparticles on n-Si substrates.

Improving Schottky diode characteristics in semiconducting devices is essential for better functionality in electronic and optoelectronic devices at nanoscale. In this paper, we investigate the electric transport characteristics of a gold (Au)-tip/n-Si-based nano-Schottky diode by using a conductive-mode atomic force microscope (CAFM). First, 10 nm average diameter Au nanoparticles (NPs) are monodispersed on the highly cleaned n-type Si substrate using an optimized spin-coating technique.

Photodetection Characteristics of Gold Coated AFM Tips and n-Silicon Substrate nano-Schottky Interfaces.

Silicon (Si)-based photodetectors are appealing candidates due to their low cost and compatibility with the complementary metal oxide semiconductor (CMOS) technology. The nanoscale devices based on Si can contribute efficiently in the field of photodetectors. In this report, we investigate the photodetection capability of nano-Schottky junctions using gold (Au) coated conductive atomic force microscope (C-AFM) tips, and highly cleaned n-Si substrate interface.

Hexagonal germanium formation at room temperature using controlled penetration depth nano-indentation.

Thin Ge films directly grown on Si substrate using two-step low temperature growth technique are subjected to low load nano-indentation at room temperature. The nano-indentation is carried out using a Berkovich diamond tip (R ~ 20 nm). The residual impressions are studied using ex-situ Raman Micro-Spectroscopy, Atomic Force Microscopy combined system, and Transmission Electron Microscopy.

Interface engineering of graphene-silicon Schottky junction solar cells with an AlO interfacial layer grown by atomic layer deposition.

The recent progress in graphene (Gr)/silicon (Si) Schottky barrier solar cells (SBSC) has shown the potential to produce low cost and high efficiency solar cells. Among the different approaches to improve the performance of Gr/Si SBSC is engineering the interface with an interfacial layer to reduce the high recombination at the graphene (Gr)/silicon (Si) interface and facilitate the transport of photo-generated carriers. Herein, we demonstrate improved performance of Gr/Si SBSC by engineering the interface with an aluminum oxide (AlO) layer grown by atomic layer deposition (ALD).

Metal-germanium-metal photodetector grown on silicon using low temperature RF-PECVD.

In this paper, germanium metal-semiconductor-metal photodetectors (MSM PDs) are fabricated on Si using a low-temperature two-step deposition technique by RF-PECVD. The photodetectors are optimized to effectively suppress the dark current through the insertion of n-type a-Si:H interlayer between the metal/Ge interface. Tuning the Schottky Barrier Height (SBH) by inserting different thickness of the interlayer is investigated.

Cubic-phase zirconia nano-island growth using atomic layer deposition and application in low-power charge-trapping nonvolatile-memory devices.

The manipulation of matter at the nanoscale enables the generation of properties in a material that would otherwise be challenging or impossible to realize in the bulk state. Here, we demonstrate growth of zirconia nano-islands using atomic layer deposition on different substrate terminations. Transmission electron microscopy and Raman measurements indicate that the nano-islands consist of nano-crystallites of the cubic-crystalline phase, which results in a higher dielectric constant (κ ∼ 35) than the amorphous phase case (κ ∼ 20).

~3-nm ZnO Nanoislands Deposition and Application in Charge Trapping Memory Grown by Single ALD Step.

Low-dimensional semiconductor nanostructures are of great interest in high performance electronic and photonic devices. ZnO is considered to be a multifunctional material due to its unique properties with potential in various applications. In this work, 3-nm ZnO nanoislands are deposited by Atomic Layer Deposition (ALD) and the electronic properties are characterized by UV-Vis-NIR Spectrophotometer and X-ray Photoelectron Spectroscopy.

1D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices.

ZnO nanoparticles (NPs) have attracted considerable interest from industry and researchers due to their excellent properties with applications in optoelectronic devices, sunscreens, photocatalysts, sensors, biomedical sciences, etc. However, the agglomeration of NPs is considered to be a limiting factor since it can affect the desirable physical and electronic properties of the NPs. In this work, 1-5 nm ZnO NPs deposited by spin- and dip-coating techniques are studied.

Enhanced non-volatile memory characteristics with quattro-layer graphene nanoplatelets vs. 2.85-nm Si nanoparticles with asymmetric Al2O 3/HfO 2 tunnel oxide.

In this work, we demonstrate a non-volatile metal-oxide semiconductor (MOS) memory with Quattro-layer graphene nanoplatelets as charge storage layer with asymmetric Al2O3/HfO2 tunnel oxide and we compare it to the same memory structure with 2.85-nm Si nanoparticles charge trapping layer. The results show that graphene nanoplatelets with Al2O3/HfO2 tunnel oxide allow for larger memory windows at the same operating voltages, enhanced retention, and endurance characteristics.

A complete physical germanium-on-silicon quantum dot self-assembly process.

Achieving quantum dot self-assembly at precise pre-defined locations is of vital interest. In this work, a novel physical method for producing germanium quantum dots on silicon using nanoindentation to pre-define nucleation sites is described. Self-assembly of ordered ~10 nm height germanium quantum dot arrays on silicon substrates is achieved.

Silicon-Germanium multi-quantum well photodetectors in the near infrared.

Single crystal Silicon-Germanium multi-quantum well layers were epitaxially grown on silicon substrates. Very high quality films were achieved with high level of control utilizing recently developed MHAH epitaxial technique. MHAH growth technique facilitates the monolithic integration of photonic functionality such as modulators and photodetectors with low-cost silicon VLSI technology.

High-efficiency metal-semiconductor-metal photodetectors on heteroepitaxially grown Ge on Si.

We demonstrate extremely efficient germanium-on-silicon metal-semiconductor-metal photodetectors with responsivities (R) as high as 0.85 A/W at 1.55 microm and 2V reverse bias.