Practical quantum networks will require multi-qubit quantum nodes. This in turn will increase the complexity of the photonic circuits needed to control each qubit and require strategies to multiplex memories. Integrated photonics operating at visible to near-infrared (VNIR) wavelength range can provide solutions to these needs.
View Article and Find Full Text PDFResonator-based optical frequency comb generation is an enabling technology for a myriad of applications ranging from communications to precision spectroscopy. These frequency combs can be generated in nonlinear resonators driven using either continuous-wave (CW) light, which requires alignment of the pump frequency with the cavity resonance, or pulsed light, which also mandates that the pulse repetition rate and cavity free spectral range (FSR) are carefully matched. Advancements in nanophotonics have ignited interest in chip-scale optical frequency combs.
View Article and Find Full Text PDFSilicon vacancy centers (SiVs) in diamond have emerged as a promising platform for quantum sciences due to their excellent photostability, minimal spectral diffusion, and substantial zero-phonon line emission. However, enhancing their slow nanosecond excited-state lifetime by coupling to optical cavities remains an outstanding challenge, as current demonstrations are limited to ∼10-fold. Here, we couple negatively charged SiVs to sub-diffraction-limited plasmonic cavities and achieve an instrument-limited ≤8 ps lifetime, corresponding to a 135-fold spontaneous emission rate enhancement and a 19-fold photoluminescence enhancement.
View Article and Find Full Text PDFThin-film lithium niobate (TFLN) is a promising electro-optic (EO) photonics platform with high modulation bandwidth, low drive voltage, and low optical loss. However, EO modulation in TFLN is known to relax on long timescales. Instead, thermo-optic heaters are often used for stable biasing, but heaters incur challenges with cross-talk, high power, and low bandwidth.
View Article and Find Full Text PDFIntegrated electro-optic (EO) modulators are fundamental photonics components with utility in domains ranging from digital communications to quantum information processing. At telecommunication wavelengths, thin-film lithium niobate modulators exhibit state-of-the-art performance in voltage-length product (VL), optical loss, and EO bandwidth. However, applications in optical imaging, optogenetics, and quantum science generally require devices operating in the visible-to-near-infrared (VNIR) wavelength range.
View Article and Find Full Text PDFBridging the "terahertz gap" relies upon synthesizing arbitrary waveforms in the terahertz domain enabling applications that require both narrow band sources for sensing and few-cycle drives for classical and quantum objects. However, realization of custom-tailored waveforms needed for these applications is currently hindered due to limited flexibility for optical rectification of femtosecond pulses in bulk crystals. Here, we experimentally demonstrate that thin-film lithium niobate circuits provide a versatile solution for such waveform synthesis by combining the merits of complex integrated architectures, low-loss distribution of pump pulses on-chip, and an efficient optical rectification.
View Article and Find Full Text PDFWe measure the photothermal nonlinear response in suspended cubic silicon carbide (3C-SiC) and 3C-SiC-on-insulator (SiCOI) microring resonators. Bi-stability and thermo-optic hysteresis is observed in both types of resonators, with the suspended resonators showing a stronger response. A photothermal nonlinear index of 4.
View Article and Find Full Text PDFElectro-optic modulators are essential for sensing, metrology and telecommunications. Most target fiber applications. Instead, metasurface-based architectures that modulate free-space light at gigahertz (GHz) speeds can boost flat optics technology by microwave electronics for active optics, diffractive computing or optoelectronic control.
View Article and Find Full Text PDFExisting nonlinear-optic implementations of pure, unfiltered heralded single-photon sources do not offer the scalability required for densely integrated quantum networks. Additionally, lithium niobate has hitherto been unsuitable for such use due to its material dispersion. We engineer the dispersion and the quasi-phasematching conditions of a waveguide in the rapidly emerging thin-film lithium niobate platform to generate spectrally separable photon pairs in the telecommunications band.
View Article and Find Full Text PDFDiamond offers good optical properties and hosts bright color centers with long spin coherence times. Recent advances in angled-etching of diamond, specifically with reactive ion beam angled etching (RIBAE), have led to successful demonstration of quantum photonic devices operating at visible wavelengths. However, larger devices operating at telecommunication wavelengths have been difficult to fabricate due to the increased mask erosion, arising from the increased size of devices requiring longer etch times.
View Article and Find Full Text PDFOwing to its attractive optical and electronic properties, silicon carbide is an emerging platform for integrated photonics. However an integral component of the platform is missing-an electro-optic modulator, a device which encodes electrical signals onto light. As a non-centrosymmetric crystal, silicon carbide exhibits the Pockels effect, yet a modulator has not been realized since the discovery of this effect more than three decades ago.
View Article and Find Full Text PDFEfficient frequency shifting and beam splitting are important for a wide range of applications, including atomic physics, microwave photonics, optical communication and photonic quantum computing. However, realizing gigahertz-scale frequency shifts with high efficiency, low loss and tunability-in particular using a miniature and scalable device-is challenging because it requires efficient and controllable nonlinear processes. Existing approaches based on acousto-optics, all-optical wave mixing and electro-optics are either limited to low efficiencies or frequencies, or are bulky.
View Article and Find Full Text PDFWe experimentally demonstrate on-chip supercontinuum generation in the visible region in angle-etched diamond waveguides. We measure an output spectrum spanning 670-920 nm in a 5-mm-long waveguide using 100-fs pulses with 187 pJ of incident pulse energy. Our fabrication technique, combined with diamond's broad transparency window, offers a potential route toward broadband supercontinuum generation in the UV domain.
View Article and Find Full Text PDFIntegrated lithium niobate (LN) photonic circuits have recently emerged as a promising candidate for advanced photonic functions such as high-speed modulation, nonlinear frequency conversion, and frequency comb generation. For practical applications, optical interfaces that feature low fiber-to-chip coupling losses are essential. So far, the fiber-to-chip loss (commonly >10 dB/facet) has dominated the total insertion losses of typical LN photonic integrated circuits, where on-chip losses can be as low as 0.
View Article and Find Full Text PDFOptical frequency combs consist of equally spaced discrete optical frequency components and are essential tools for optical communication, precision metrology, timing and spectroscopy. At present, combs with wide spectra are usually generated by mode-locked lasers or dispersion-engineered resonators with third-order Kerr nonlinearity. An alternative method of comb production uses electro-optic (EO) phase modulation in a resonator with strong second-order nonlinearity, resulting in combs with excellent stability and controllability.
View Article and Find Full Text PDFElectro-optic modulators translate high-speed electronic signals into the optical domain and are critical components in modern telecommunication networks and microwave-photonic systems. They are also expected to be building blocks for emerging applications such as quantum photonics and non-reciprocal optics. All of these applications require chip-scale electro-optic modulators that operate at voltages compatible with complementary metal-oxide-semiconductor (CMOS) technology, have ultra-high electro-optic bandwidths and feature very low optical losses.
View Article and Find Full Text PDFUsing a high-Q diamond microresonator (Q>300,000) interfaced with high-power-handling directly-written doped-glass waveguides, we demonstrate a Raman laser in an integrated platform pumped in the near-visible. Both TM-to-TE and TE-to-TE lasing is observed, with a Raman lasing threshold as low as 20 mW and Stokes power of over 1 mW at 120 mW pump power. Stokes emission is tuned over a 150 nm (60 THz) bandwidth of approximately 875 nm wavelength, corresponding to 17.
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