A combined supply-inverted bipolar pulser and a Tx/Rx switch is proposed to drive capacitive micromachined ultrasonic transducers (CMUTs). The supply-inverted bipolar pulser adopts a bootstrap circuit combined with stacked transistors, which guarantees high voltage (HV) operation above the process limit without lowering device reliability. This circuit generates an output signal with a peak-to-peak voltage that is almost twice the supply level.
View Article and Find Full Text PDFWith Capacitive Micromachined Ultrasound Transducers (CMUTs) increasingly being used for high intensity, large signal ultrasound applications and several drive methods being proposed, the efficiency of these devices in this operation regime have not been quantitatively evaluated. Since well-known frequency and capacitance-based coupling coefficients definitions are not valid for large signal, nonlinear operation, an energy-based definition should be used. In this paper, an expression for mechanical energy in a CMUT is obtained based on the assumption that CMUT is a linear time varying capacitor in all regimes of operation.
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March 2018
A supply-doubled pulse-shaping high voltage (HV) pulser is presented for medical ultrasound imaging applications, particularly those that use capacitive micromachined ultrasonic transducers (CMUT). The pulser employs a bootstrap circuit combined with dynamically-biased stacked transistors, which allow HV operation above process limit without lowering device reliability. The new pulser overcomes supply voltage limitation of conventional unipolar pulsers by generating output signals that are almost twice the supply level.
View Article and Find Full Text PDFThis paper reports an improved CMOS compatible low temperature sacrificial layer fabrication process for Capacitive Micromachined Ultrasonic Transducers (CMUTs). The process adds the fabrication step of silicon oxide evaporation which is followed by a lift-off step to define the membrane support area without a need for an extra mask. This simple addition improves reliability by reducing the electric field between the top and bottom electrodes everywhere except the moving membrane without affecting the vacuum gap thickness.
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