Dopant segregation in polycrystalline monolayer graphene.

Heterogeneity in dopant concentration has long been important to the electronic properties in chemically doped materials. In this work, we experimentally demonstrate that during the chemical vapor deposition process, in contrast to three-dimensional polycrystals, the substitutional nitrogen atoms avoid crystal grain boundaries and edges over micron length scales while distributing uniformly in the interior of each grain. This phenomenon is universally observed independent of the details of the growth procedure such as temperature, pressure, substrate, and growth precursor.

Segregation of sublattice domains in nitrogen-doped graphene.

Atomic-level details of dopant distributions can significantly influence the material properties. Using scanning tunneling microscopy, we investigate the distribution of substitutional dopants in nitrogen-doped graphene with regard to sublattice occupancy within the honeycomb structure. Samples prepared by chemical vapor deposition (CVD) using pyridine on copper exhibit well-segregated domains of nitrogen dopants in the same sublattice, extending beyond 100 nm.

Local atomic and electronic structure of boron chemical doping in monolayer graphene.

We use scanning tunneling microscopy and X-ray spectroscopy to characterize the atomic and electronic structure of boron-doped and nitrogen-doped graphene created by chemical vapor deposition on copper substrates. Microscopic measurements show that boron, like nitrogen, incorporates into the carbon lattice primarily in the graphitic form and contributes ~0.5 carriers into the graphene sheet per dopant.

Stereo-isomerism controls surface reactivity: 1-chloropentane-pairs on Si(100)-2×1.

Chloropentane forms asymmetric ('A') and symmetric ('S') pairs on Si(100)-2×1, differing in the direction of curvature of one pentane tail. Surprisingly this renders the rate of thermal reaction of 'A' fifteen times greater than 'S' in chlorinating room-temperature silicon. Correspondingly, for electron-induced reaction the energy threshold for A is 1 eV less than for S.

Directed long-range molecular migration energized by surface reaction.

The recoil of adsorbates away (desorption) and towards (reaction) surfaces is well known. Here, we describe the long-range recoil of adsorbates in the plane of a surface, and accordingly the novel phenomenon of reactions occurring at a substantial distance from the originating event. Three thermal and three electron-induced surface reactions are shown by scanning tunnelling microscopy to propel their physisorbed ethylenic products across the rough surface of Si(100) over a distance of up to 200 Å before an attachment reaction.

Imprinting self-assembled patterns of lines at a semiconductor surface, using heat, light, or electrons.

The fabrication of nano devices at surfaces makes conflicting demands of mobility for self-assembly (SA) and immobility for permanence. The solution proposed in earlier work from this laboratory involved pattern formation in physisorbed molecules by SA, followed by localized reaction to chemically imprint the pattern substantially unchanged, a procedure we termed molecular-scale imprinting (MSI). Here, as proof of generality we extended this procedure, previously applied to imprinting circles on Si(111)-7 × 7, to SA lines of 1-chloropentane (CP) on Si(100)-2 × 1.

Metal to insulator transition in films of molecularly linked gold nanoparticles.

We report a metal to insulator transition (MIT) in disordered films of molecularly linked gold nanoparticles (NPs). As the number of carbons (n) of alkanedithiol linker molecules (C(n)S2) is varied, resistance (R) at low temperature (T = 2 K) and at 200 K, as well as trends in R vs T data at intermediate temperatures, all point to an MIT occurring at n = 5. We describe these results in a context of a Mott-Hubbard MIT.

Influence of linker molecules on charge transport through self-assembled single-nanoparticle devices.

We investigate electrical characteristics of single-electron electrode/nanoisland/electrode devices formed by alkanedithiol assisted self-assembly. Contrary to predictions of the orthodox model for double tunnel junction devices, we find a significant ( approximately fivefold) discrepancy in single-electron charging energies determined by Coulomb blockade (CB) voltage thresholds in current-voltage measurements versus those determined by an Arrhenius analysis of conductance in the CB region. The energies do, however, scale with particle sizes, consistent with single-electron charging phenomena.