Room Temperature Synthesis of Tellurium by Solution Atomic Layer Deposition.

This study demonstrates the deposition of tellurium (Te) on silicon/silicon nitride substrates using solution atomic layer deposition (sALD) at ambient temperature. The process employs tellurium tetrachloride (TeCl) and bis(triethylsilyl)-telluride ((TES)Te) as precursors, with toluene as the solvent. Growth parameters were optimized through systematic variation of the pulse and purge times.

Interfacial Distortion of SbTe-SbSe Multilayers via Atomic Layer Deposition for Enhanced Thermoelectric Properties.

Atomic layer deposition (ALD) is an effective technique for depositing thin films with precise control of layer thickness and functional properties. In this work, SbTe-SbSe nanostructures were synthesized using thermal ALD. A decrease in the SbTe layer thickness led to the emergence of distinct peaks from the Laue rings, indicative of a highly textured film structure with optimized crystallinity.

Factors disrupting the continuity of care for patients with chronic disease during the pandemics: A systematic review.

Background And Aims: Continuous routine care is necessary to prevent long-term complications of chronic diseases and improve patients' health conditions. This review study was conducted to determine the factors disrupting continuity of care for patients with chronic diseases during the pandemic.

Methods: All original articles published on factors disrupting continuity of care for patients with chronic disease during a pandemic between December 2019 and June 28, 2023, in PubMed, Web of Science, Scopus, and ProQuest databases were searched.

Wafer-Scale Growth of SbTe Films via Low-Temperature Atomic Layer Deposition for Self-Powered Photodetectors.

In this work, we demonstrate the performance of a silicon-compatible, high-performance, and self-powered photodetector. A wide detection range from visible (405 nm) to near-infrared (1550 nm) light was enabled by the vertical p-n heterojunction between the p-type antimony telluride (SbTe) thin film and the n-type silicon (Si) substrates. A SbTe film with a good crystal quality, low density of extended defects, proper stoichiometry, p-type nature, and excellent uniformity across a 4 in.

High-Performance n-Type Ge-Free Silicon Thermoelectric Material from Silicon Waste.

Silicon waste (SW), a byproduct from the photovoltaic industry, can be a prospective and environmentally friendly source for silicon in the field of thermoelectric (TE) materials. While thermoelectricity is not as sensitive toward impurities as other semiconductor applications, the impurities within the SW still impede the enhancement of the thermoelectric figure of merit, . Besides, the high thermal conductivity of silicon limits its applications as a TE material.

Reduced Lattice Thermal Conductivity for Half-Heusler ZrNiSn through Cryogenic Mechanical Alloying.

The ZrNiSn-based half-Heusler compounds are promising for thermoelectric applications in the mid-to-high temperature range. However, their thermoelectric performance was greatly limited due to the remaining high thermal conductivity, especially the lattice thermal conductivity. Herein, we report the synthesis of pristine half-Heusler ZrNiSn through direct mechanical alloying at a liquid nitrogen temperature (i.