Sensitivity of Al-Doped Zinc-Oxide Extended Gate Field Effect Transistors to Low-Dose X-ray Radiation.

Herein, we investigated the applicability of thick film and bulk disk forms of aluminum-doped zinc oxide (AZO) for low-dose X-ray radiation dosimetry using the extended gate field effect transistor (EGFET) configuration. The samples were fabricated using the chemical bath deposition (CBD) technique. A thick film of AZO was deposited on a glass substrate, while the bulk disk form was prepared by pressing the collected powders.