Characteristics of flexible and transparent EuO resistive switching memory at high bending condition.

The characteristics of ITO/EuO/ITO/PET transparent and flexible resistive switching memory are studied. The device exhibits superior characteristics such as device area-independent and forming-free resistive switching behavior with a resistance on/off ratio of 10, good retention of >10 s and high AC endurance of >10 cycles. The conduction mechanism of the high-resistance state is the Poole-Frenkel mechanism, while that of the low-resistance state is ohmic conduction.

Conductive bridge random access memory characteristics of SiCN based transparent device due to indium diffusion.

In this work, the transparent bipolar resistive switching characteristics of a SiCN-based ITO/SiCN/AZO structure due to In diffusion from ITO is studied. The SiCN based device is found to be 80% transparent in the visible wavelength region. This device, with AZO as both top and bottom electrodes, does not show any RRAM property due to deposition of the high quality O-free SiCN film.

Emission characteristics of self-assembled strained GeSn islands for sources in the optical communication region.

Self-assembled strained Ge Sn islands on Si (100) have been grown at a low temperature using molecular beam epitaxy. The in-built strain and fraction of Sn in the islands have been estimated using x-ray photoelectron spectroscopy and high resolution x-ray diffraction study of grown samples. No-phonon assisted transition in the optical communication wavelength range of 1.

Enhancement of photoluminescence intensity of erbium doped silica containing Ge nanocrystals: distance dependent interactions.

Photo-physical processes in Er-doped silica glass matrix containing Ge nanocrystals prepared by the sol-gel method are presented in this article. Strong photoluminescence at 1.54 μm, important for fiber optics telecommunication systems, is observed from the different sol-gel derived glasses at room temperature.

Electroluminescence from metal-insulator-semiconductor tunneling diodes using compressively strained Ge on Si0.5Ge0.5 virtual substrates.

Direct band gap optical transition in compressively strained Ge film is demonstrated for the first time under current injection through a metal-insulator-semiconductor diode structure. The compressively strained Ge layer is grown on the relaxed Si0.5Ge0.

MBE-grown Si and Si(1-x)Ge(x) quantum dots embedded within epitaxial Gd2O3 on Si(111) substrate for floating gate memory device.

Si and Si(1-x)Ge(x) quantum dots embedded within epitaxial Gd2O3 grown by molecular beam epitaxy have been studied for application in floating gate memory devices. The effect of interface traps and the role of quantum dots on the memory properties have been studied using frequency-dependent capacitance-voltage and conductance-voltage measurements. Multilayer quantum dot memory comprising four and five layers of Si quantum dots exhibits a superior memory window to that of single-layer quantum dot memory devices.

Optical photoresponse of CuS-n-Si radial heterojunction with Si nanocone arrays fabricated by chemical etching.

The paper deals with the fabrication of a p-CuS-n-Si nanocone heterojunction based highly sensitive broad band photodetector. Cone-like one dimensional Si nanostructures formed by metal assisted chemical etching, with superior antireflection characteristics have been used as templates for fabrication of the heterojunction. Covellite CuS material was synthesized by a simple chemical reaction for used as target material for the fabrication of p-CuS-n-Si nanocone heterojunctions via pulsed laser ablation.

Optical and electrical properties of undoped and doped Ge nanocrystals.

Size-dependent photoluminescence characteristics from Ge nanocrystals embedded in different oxide matrices have been studied to demonstrate the light emission in the visible wavelength from quantum-confined charge carriers. On the other hand, the energy transfer mechanism between Er ions and Ge nanocrystals has been exploited to exhibit the emission in the optical fiber communication wavelength range. A broad visible electroluminescence, attributed to electron hole recombination of injected carriers in Ge nanocrystals, has been achieved.