IR Hidden Patterns for Security Labels.

Authentication of a product's originality by anticounterfeiting labels represents a crucial point toward protection against forgery. Fast and scalable fabrication methods of original labels with a high degree of protection are in high demand for the protection of valuable goods. Here, we propose a simple strategy for fabrication of hidden security tags with IR luminescent readout by the direct femtosecond laser patterning of silicon-erbium-silicon sandwiched thin films.

Light-Emitting Diodes Based on InGaN/GaN Nanowires on Microsphere-Lithography-Patterned Si Substrates.

The direct integration of epitaxial III-V and III-N heterostructures on Si substrates is a promising platform for the development of optoelectronic devices. Nanowires, due to their unique geometry, allow for the direct synthesis of semiconductor light-emitting diodes (LED) on crystalline lattice-mismatched Si wafers. Here, we present molecular beam epitaxy of regular arrays n-GaN/i-InGaN/p-GaN heterostructured nanowires and tripods on Si/SiO substrates prepatterned with the use of cost-effective and rapid microsphere optical lithography.

Study of Cryogenic Unmasked Etching of "Black Silicon" with Ar Gas Additives.

The influence of Ar gas additives on ≪black silicon≫ formation is shown in this work. The way to achieve the conical shape of Si texture using low Ar dilution is demonstrated. Also, a possibility of silicon nanowire width reduction keeping a high density of array is shown.