The Influence of the Structural and Morphological Properties of WO Thin Films Obtained by PLD on the Photoelectrochemical Water-Splitting Reaction Efficiency.

Due to its physical and chemical properties, the n-type tungsten oxide (WO) semiconductor is a suitable photoanode for water decomposition reaction. The responses of the photoelectrochemical PEC water-splitting properties as an effect of structural and optical changes of WO thin films, as well as the nature of electrolyte solutions, were studied in this work. The WO thins films have been obtained by pulsed laser deposition (PLD) on silicon (Si(001)) covered with platinum substrates using three different laser wavelengths.