Roughness Suppression in Electrochemical Nanoimprinting of Si for Applications in Silicon Photonics.

Metal-assisted electrochemical nanoimprinting (Mac-Imprint) scales the fabrication of micro- and nanoscale 3D freeform geometries in silicon and holds the promise to enable novel chip-scale optics operating at the near-infrared spectrum. However, Mac-Imprint of silicon concomitantly generates mesoscale roughness (e.g.

Electroless Dealloying of Thin-Film Nanocrystalline Au-Ag Alloys: Mechanisms of Ligament Nucleation and Sources of Its Synthesis Variability.

Control of ligament size in nanoporous gold through process inputs in chemical dealloying holds the potential to exploit its size dependent properties in applications in energy and biomedicine. While its morphology evolution is regulated by the kinetics of coarsening, recent studies are focused on the early stage of dealloying (e.g.

Metal-Assisted Electrochemical Nanoimprinting of Porous and Solid Silicon Wafers.

Metal-assisted electrochemical imprinting (Mac-Imprint) is a combination of metal-assisted chemical etching (MACE) and nanoimprint lithography that is capable of direct patterning 3D micro- and nanoscale features in monocrystalline group IV (e.g., Si) and III-V (e.

Electrochemical nanoimprinting of silicon.

Scalable nanomanufacturing enables the commercialization of nanotechnology, particularly in applications such as nanophotonics, silicon photonics, photovoltaics, and biosensing. Nanoimprinting lithography (NIL) was the first scalable process to introduce 3D nanopatterning of polymeric films. Despite efforts to extend NIL's library of patternable media, imprinting of inorganic semiconductors has been plagued by concomitant generation of crystallography defects during imprinting.