Toward controlling the AlO/ZnO interface properties by ALD preparation.

An AlO/ZnO heterojunction was grown on a Si single crystal substrate by subsequent thermal and plasma-assisted atomic layer deposition (ALD) . The band offsets of the heterointerface were then studied by consecutive removal of the layers by argon sputtering, followed by X-ray photoelectron spectroscopy. The valence band maximum and conduction band minimum of AlO are found to be 1.