Charge carrier transport and digital data transmission performance in sub-20 nm diameter indium antimonide nanowires.

We investigated the data transmission performance of indium antimonide (InSb) nanowires synthesized on (100) type substrates using chemical vapor deposition and having diameters of 20 nm and below using the eye diagram approach of the transmission line. NW interconnect parameters including the bit error rate, quality factor, signal attenuation and maximum bandwidth have been extracted. Nanowires can sustain data rates of up to 10 mega bits per second (Mbps) without any impedance matching and de-embedding of the parasitic parameters coming from the measurement system, and the data rate is directly proportional to nanowire diameter.