Semiempirical Two-Dimensional Model of the Bipolar Resistive Switching Process in Si-NCs/SiO Multilayers.

In this work, the SET and RESET processes of bipolar resistive switching memories with silicon nanocrystals (Si-NCs) embedded in an oxide matrix is simulated by a stochastic model. This model is based on the estimation of two-dimensional oxygen vacancy configurations and their relationship with the resistive state. The simulation data are compared with the experimental current-voltage data of Si-NCs/SiO2 multilayer-based memristor devices.

Digital and Analog Resistive Switching Behavior in Si-NCs Embedded in a Si/SiO Multilayer Structure for Neuromorphic Systems.

In this work, we report the digital and analog resistive-switching (RS) characteristics in a memristor based on silicon nanocrystals (Si-NCs) integrated into a complementary metal-oxide-semiconductor (MOS) structure. Si-NCs with a diameter of 5.48 ± 1.

Development of Heterojunction c-Si/a-SiC:H PIN Light-Emitting Diodes.

In this work, we explored the feasibility of the fabrication of PIN light-emitting diodes (LEDs) consisting of heterojunctions of amorphous silicon-carbide (a-SiC:H) thin films and crystalline silicon wafers (c-Si). The objective is the future development of electro-photonic systems in the same c-Si wafer, containing transistors, sensors, LEDs and waveguides. Two different heterojunction LEDs were fabricated consisting of PIN and PINN structures, where a-SiC:H thin films were used as P-type and I-type layers, while an N-type c-Si substrate was used as an active part of the device.

Study of the Effect of Nitric Acid in Electrochemically Synthesized Silicon Nanocrystals: Tunability of Bright and Uniform Photoluminescence.

In this work, we show a correlation between the composition and the microstructural and optical properties of bright and uniform luminescent porous silicon (PSi) films. PSi films were synthesized by electrochemical etching using nitric acid in an electrolyte solution. PSi samples synthesized with nitric acid emit stronger (up to six-fold greater) photoluminescence (PL) as compared to those obtained without it.

Effect of the Graded Silicon Content in SRN/SRO Multilayer Structures on the Si Nanocrystals and Si Nanopyramids Formation and Their Photoluminescence Response.

Two multilayer (ML) structures, composed of five layers of silicon-rich oxide (SRO) with different Si contents and a sixth layer of silicon-rich nitride (SRN), were deposited by low pressure chemical vapor deposition. These SRN/SRO MLs were thermally annealed at 1100 °C for 180 min in ambient N to induce the formation of Si nanostructures. For the first ML structure (MLA), the excess Si in each SRO layer was about 10.

Medium and Short Wave RF Energy Harvester for Powering Wireless Sensor Networks.

Internet of Things (IoT) is an emerging platform in which every day physical objects provided with unique identifiers are connected to the Internet without requiring human interaction. The possibilities of such a connected world enables new forms of automation to make our lives easier and safer. Evidently, in order to keep billions of these communicating devices powered long-term, a self-sustainable operation is a key point for realization of such a complex network.