Manganese silicide nanowires via metallic flux nanonucleation: growth mechanism and temperature-dependent resistivity.

MnSinanowires are believed to be the building blocks of the newest trends of flexible and stretchable devices in nanoelectronics. In this context , growing MnSinanowires, as well as characterizing their electronic transport properties provide insight into their phenomenology. In this work, we report on the growth mechanism of MnSinanowires produced by the metallic flux nanonucleation method, as well as the resistivity measurements of these nanostructures.