Colloidal PbS quantum dot solar cells with high fill factor.

We fabricate PbS colloidal quantum dot (QD)-based solar cells using a fullerene derivative as the electron-transporting layer (ETL). A thiol treatment and oxidation process are used to modify the morphology and electronic structure of the QD films, resulting in devices that exhibit a fill factor (FF) as high as 62%. We also show that, for QDs with a band gap of less than 1 eV, an open-circuit voltage (VOC) of 0.

Heterojunction photovoltaics using printed colloidal quantum dots as a photosensitive layer.

We demonstrate a bilayer photovoltaic device consisting of a heterojunction between colloidal cadmium selenide (CdSe) quantum dots (QDs) and a wide band gap organic hole-transporting thin film of N,N'-diphenyl-N,N'-bis(3-methylphenyl)[1,1'-biphenyl]-4,4'-diamine (TPD) molecules. The active light-absorbing film of QDs is nondestructively printed onto TPD using microcontact stamping. Indium-tin-oxide (ITO) provides the top contact.