Proton irradiation Of GaO Schottky diodes and NiO/GaO heterojunctions.

p-NiO/n-GaO heterojunction (HJ) diodes exhibit much larger changes in their properties upon 1.1 MeV proton irradiation than Schottky diodes (SDs) prepared on the same material. In p-NiO/GaO HJ diodes, the narrow region adjacent to the HJ boundary is found to contain a high density of relatively deep centers with levels near E-0.