We present a study on distributed feedback tapered quantum cascade lasers emitting at 14 µm. The fabricated lasers with taper angles between 0° and 3° exhibited output powers scaling in accordance with the active zone volume increase. Reduced divergence angles as small as 4.
View Article and Find Full Text PDFWe report on Sb-based interband cascade lasers simultaneously grown on GaSb, GaAs and Si substrates. 8 µm x 2 mm devices exhibited similar threshold currents around 40 mA at 20°C and achieved continuous-wave (CW) operation up to 65°C on GaSb, GaAs and Si substrates despite a dislocation density of ∼ 4.10cm for both mismatched substrates.
View Article and Find Full Text PDFThere is currently much activity toward the integration of mid-infrared semiconductor lasers on Si substrates for developing a variety of smart, compact, sensors based on Si-photonics integrated circuits. We review this rapidly-evolving research field, focusing on the epitaxial integration of antimonide lasers, the only technology covering the whole mid-to-far-infrared spectral range. We explain how a dedicated molecular-beam epitaxy strategy allows for achieving high-performance GaSb-based diode lasers, InAs/AlSb quantum cascade lasers, and InAs/GaInSb interband cascade lasers by direct growth on on-axis (001)Si substrates, whereas GaAs-on-Si or GaSb-on-Si layers grown by metal-organic vapor phase epitaxy in large capability epitaxy tools are suitable templates for antimonide laser overgrowth.
View Article and Find Full Text PDFBenzene is a gas known to be highly pollutant for the environment, for the water and cancerogenic for humans. In this paper, we present a sensor based on Quartz Enhanced Photoacoustic Spectroscopy dedicated to benzene analysis. Exploiting the infrared emission of a 14.
View Article and Find Full Text PDFAn off-beam quartz-enhanced photoacoustic spectroscopy (QEPAS) sensor was designed for ethylene detection using a distributed-feedback quantum cascade laser (QCL) operating in the mid-infrared around 11 μm. The acoustic microresonator configuration was experimentally optimized using an original open-cell photoacoustic setup with a MEMS microphone. Correction factors based on theoretical acoustic models were introduced in order to accurately describe the response of millimeter-sized acoustic resonators.
View Article and Find Full Text PDFUsually electromagnetic modes inside a laser resonator are a matter of the theoretical studies. In a sense we manage "to have a look into a whispering gallery mode (WGM) resonator" and observe how the resonator modes arrange in reality. The picture occurs to be quite different from the commonly used Bessel modes in a disk resonator.
View Article and Find Full Text PDFTechnological platforms offering efficient integration of III-V semiconductor lasers with silicon electronics are eagerly awaited by industry. The availability of optoelectronic circuits combining III-V light sources with Si-based photonic and electronic components in a single chip will enable, in particular, the development of ultra-compact spectroscopic systems for mass scale applications. The first circuits of such type were fabricated using heterogeneous integration of semiconductor lasers by bonding the III-V chips onto silicon substrates.
View Article and Find Full Text PDFWe report low threshold InAs/AlSb quantum cascade lasers emitting near 15 µm. The devices are based on a vertical design similar to those employed previously in far infrared InAs-based QCLs, whereas the doping level of the active core is considerably decreased. The lasers exhibit a threshold current density as low as 730 A/cm in pulsed mode at room temperature and can operate in this regime up to 410K.
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