Elastic Gallium Phosphide Nanowire Optical Waveguides-Versatile Subwavelength Platform for Integrated Photonics.

Emerging technologies for integrated optical circuits demand novel approaches and materials. This includes a search for nanoscale waveguides that should satisfy criteria of high optical density, small cross-section, technological feasibility and structural perfection. All these criteria are met with self-assembled gallium phosphide (GaP) epitaxial nanowires.

Self-assembled photonic structure: a Ga optical antenna on GaP nanowires.

Semiconductor nanowires are the perfect platform for nanophotonic applications owing to their resonant, waveguiding optical properties and technological capabilities providing control over their crystalline and chemical compositions. The vapor-liquid-solid growth mechanism allows the formation of hybrid metal-dielectric nanostructures promoting sub-wavelength light manipulation. In this work, we explore both experimentally and numerically the plasmonic effects promoted by a gallium (Ga) nanoparticle optical antenna decorating the facet of gallium phosphide (GaP) nanowires.

Tuning the Optical Properties and Conductivity of Bundles in Networks of Single-Walled Carbon Nanotubes.

The films of single-walled carbon nanotubes (SWCNTs) are a promising material for flexible transparent electrodes, which performance depends not only on the properties of individual nanotubes but also, foremost, on bundling of individual nanotubes. This work investigates the impact of densification on optical and electronic properties of SWCNT bundles and fabricated films. Our ab initio analysis shows that the optimally densified bundles, consisting of a mixture of quasi-metallic and semiconducting SWCNTs, demonstrate quasi-metallic behavior and can be considered as an effective conducting medium.

Improved performance of InGaAs/GaAs microdisk lasers epi-side down bonded onto a silicon board.

We study the impact of improved heat removal on the performance of InGaAs/GaAs microdisk lasers epi-side down bonded onto a silicon substrate. Unlike the initial characteristics of microlasers on a GaAs substrate, the former's bonding results in a decrease in thermal resistance by a factor of 2.3 (1.