In spite of the theoretical advantages associated with nitride microcavities, the quality factors of devices with embedded indium gallium nitride (InGaN) or gallium nitride (GaN) optical emitters still remain low. In this work we identify threading dislocations (TDs) as a major limitation to the fabrication of high quality factor devices in the nitrides. We report on the use of cathodoluminescence (CL) to identify individual TD positions within microdisk lasers containing either InGaN quantum wells or quantum dots.
View Article and Find Full Text PDFProc Natl Acad Sci U S A
December 2014
A noninvasive, in situ calibration method for total internal reflection microscopy (TIRM) based on optical tweezing is presented, which greatly expands the capabilities of this technique. We show that by making only simple modifications to the basic TIRM sensing setup and procedure, a probe particle's absolute position relative to a dielectric interface may be known with better than 10 nm precision out to a distance greater than 1 μm from the surface. This represents an approximate 10× improvement in error and 3× improvement in measurement range over conventional TIRM methods.
View Article and Find Full Text PDFProc Natl Acad Sci U S A
September 2014
Low-threshold lasers realized within compact, high-quality optical cavities enable a variety of nanophotonics applications. Gallium nitride materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an outstanding platform to study light-matter interactions and realize practical devices such as efficient light-emitting diodes and nanolasers. Despite progress in the growth and characterization of InGaN quantum dots, their advantages as the gain medium in low-threshold lasers have not been clearly demonstrated.
View Article and Find Full Text PDFWe predict that a low-permittivity oblate body (disk-shaped object) above a thin metal substrate (plate with a hole) immersed in a fluid of intermediate permittivity will experience a metastable equilibrium (restoring force) near the center of the hole. Stability is the result of a geometry-induced transition in the sign of the force, from repulsive to attractive, that occurs as the disk approaches the hole--in planar or nearly planar geometries, the same material combination yields a repulsive force at all separations, in accordance with the Dzyaloshinskiĭ-Lifshitz-Pitaevskiĭ condition of fluid-induced repulsion between planar bodies. We explore the stability of the system with respect to rotations and lateral translations of the disks and demonstrate interesting transitions (bifurcations) in the rotational stability of the disks as a function of their size.
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