Cross-linked perylene diimide-based n-type interfacial layer for inverted organic photovoltaic devices.

This contribution describes the synthesis and characterization of a perylene diimide (PDI)-based n-type semiconductor and its application to organic photovoltaic (OPV) devices having inverted architecture. Films of N,N'-bis(3-trimethoxysilylpropyl)-1,6,7,12-tetrachloroperylene-3,4,9,10-tetracarboxyldiimide (Cl(4)PSi(2)) and blends of this material with various polymers are solution-deposited on tin-doped indium oxide (ITO) substrates as interfacial layers (IFLs). The organic IFL described in this work is based on the air- and light-stable PDI core, annealed at low temperatures compatible with flexible substrates, and crosslinks in air for compatibility with device fabrication.