Colloidal quasi-two-dimensional cadmium chalcogenide nanoplatelets have attracted considerable interest due to their narrow excitonic emission and absorption bands, making them promising candidates for advanced optical applications. In this study, the synthesis of quasi-two-dimensional CdSe NPLs with a thickness of 3.5 monolayers was investigated to understand the effects of synthesis temperature on their stoichiometry, morphology, and optical properties.
View Article and Find Full Text PDFNanocrystals of Si doped with S, Se and Te were synthesized by annealing them in chalcogen vapors in a vacuum at a high temperature range from 800 to 850 °C. The influence of the dopant on the structure and morphology of the particles and their optical and electrical properties was studied. In the case of all three chalcogens, the recrystallization of Si was observed, and XRD peaks characteristic of noncubic Si phases were found by means of electronic diffraction for Si doped with S and Se.
View Article and Find Full Text PDFWe report a novel technique for doping InP quantum dots (QDs) with silver that makes use of a AgCl·TOP complex as a source of silver and PH3 as a phosphorus precursor. Formation of two types of nanoparticles in the reaction mixture is observed: Ag-doped InP QDs form at lower silver concentrations and novel Ag/InP core-shell nanostructures form at high Ag-precursor concentrations. Ag-doped QDs possess two luminescent bands: an excitonic band at approx.
View Article and Find Full Text PDFHere we report a simple method for the creation of highly luminescent core-shell InP/ZnX (X = S, Se) quantum dots (QDs) on the basis of a phosphine synthetic route. In this method a Zn precursor was added to the reaction mixture at the beginning of the synthesis to form an In(Zn)P alloy structure, which promoted the formation of a ZnX shell. Core-shell InP/ZnX QDs exhibit highly intensive emission with a quantum yield over 50%.
View Article and Find Full Text PDFZinc-doped InP(Zn) colloidal quantum dots (QDs) with narrow size distribution and low defect concentration were grown for the first time via a novel phosphine synthetic route and over a wide range of Zn doping. We report the influence of Zn on the optical properties of the obtained quantum dots. We propose a mechanism for the introduction of Zn in the QDs and show that the incorporation of Zn atoms into the InP lattice leads to the formation of Zn acceptor levels and a luminescence tail in the red region of the spectra.
View Article and Find Full Text PDFRecently, a new simple and fast method for the synthesis of InP quantum dots by using phosphine as phosphorous precursor and myristic acid as surface stabilizer was reported. Purification after synthesis is necessary to obtain samples with good optical properties. Two methods of purification were compared and the surface processes which occur during purification were studied.
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