Heteroepitaxial growth of GaSb nanotrees with an ultra-low reflectivity in a broad spectral range.

We report on the growth of GaSb nanotrees on InAs { ̅1 ̅1 ̅1}(B) substrates by chemical beam epitaxy. GaSb nanotrees form by the nucleation of Ga droplets on the surface of < ̅1 ̅1 ̅1>(B) oriented GaSb nanowires followed by the epitaxial growth of branches catalyzed by these Ga droplets. In the tip region, the trunks of the GaSb nanotrees are periodically twinned, which is attributed to a change of the effective V/III ratio at the later stage of growth as a consequence of the change in surface structure.

Ag-assisted CBE growth of ordered InSb nanowire arrays.

We present growth studies of InSb nanowires grown directly on [Formula: see text] and [Formula: see text] substrates. The nanowires were synthesized in a chemical beam epitaxy (CBE) system and are of cubic zinc blende structure. To initiate nanowire nucleation we used lithographically positioned silver (Ag) seed particles.