CVD grown GaSbN films as visible-light active photoanodes.

The III-V semiconductor GaN is a promising material for photoelectrochemical (PEC) cells, however the large bandgap of 3.45 eV is a considerable hindrance for the absorption of visible light. Therefore, the substitution of small amounts of N anions by isovalent Sb is a promising route to lower the bandgap and thus increase the PEC activity under visible light.

Investigating Zinc Ketoiminates as a New Class of Precursors for Solution Deposition of ZnO Thin Films.

Zinc oxide (ZnO) has been recognized as one of the most promising metal oxide semiconductor material for processing low-cost thin film transistors (TFTs). Within the scope of this work, we demonstrate a simple, stabilizer free and very efficient chemical solution deposition (CSD) route to grow high quality ZnO layers. The identification of a highly soluble zinc ketoiminate precursor that undergoes hydrolysis under ambient conditions with the facile cleavage of the ligands was the key to develop a simple and straightforward process for ZnO thin films under mild process conditions.

Fabrication of zinc-dicarboxylate- and zinc-pyrazolate-carboxylate-framework thin films through vapour-solid deposition.

Fabrication of three-dimensional metal-organic framework (MOF) thin films has been investigated for the first time through the conversion of a ZnO layer via a pure vapour-solid deposition reaction at ambient pressure. The fabrication of MOF thin films with a dicarboxylate linker, (DMA)2[Zn3(bdc)4] (1) (bdc = 1,4-benzenedicarboxylate), and a carboxy-pyrazolate linker, [Zn4O(dmcapz)6] (2) (dmcapz = 3,5-dimethyl-4-carboxypyrazole), involves the deposition of the linker and/or the preparation of a composite film preliminarily and its subsequent conversion into a MOF film using closed cell thermal treatment. Furthermore, it was possible to isolate thin films with a MOF-5 isotype structure grown along the [110] direction, using a carboxy-pyrazolate linker.