Renewed interest in the ferroelectric semiconductor germanium telluride was recently triggered by the direct observation of a giant Rashba effect and a 30-year-old dream about a functional spin field-effect transistor. In this respect, all-electrical control of the spin texture in this material in combination with ferroelectric properties at the nanoscale would create advanced functionalities in spintronics and data information processing. Here, we investigate the atomic and electronic properties of GeTe bulk single crystals and their (111) surfaces.
View Article and Find Full Text PDFThe mechanism of few-layer graphene growth on the technologically relevant cubic-SiC/Si(001) substrate is uncovered using high-resolution core-level and angle-resolved photoelectron spectroscopy, low-energy electron microscopy, and microspot low-energy electron diffraction. The thickness of the graphitic overlayer supported on the silicon carbide substrate and related changes in the surface structure are precisely controlled by monitoring the progress of the surface graphitization in situ during high-temperature graphene synthesis, using a combination of microspectroscopic techniques. The experimental data reveal gradual changes in the preferential graphene lattice orientations at the initial stages of the few-layer graphene growth on SiC(001) and can act as reference data for controllable growth of single-, double-, and triple-layer graphene on silicon carbide substrates.
View Article and Find Full Text PDFHerein, we report a simple method for a covalent modification of surface supported graphene with photoactive dyes. Graphene was fabricated on cubic-SiC/Si(001) wafers due to their low cost and suitability for mass-production of continuous graphene fit for electronic applications on millimetre scale. Functionalisation of the graphene surface was carried out in solution via white light induced photochemical generation of phenazine radicals from phenazine diazonium salt.
View Article and Find Full Text PDFGraphene supports long spin lifetimes and long diffusion lengths at room temperature, making it highly promising for spintronics. However, making graphene magnetic remains a principal challenge despite the many proposed solutions. Among these, graphene with zig-zag edges and ripples are the most promising candidates, as zig-zag edges are predicted to host spin-polarized electronic states, and spin-orbit coupling can be induced by ripples.
View Article and Find Full Text PDFTrilayer graphene exhibits exceptional electronic properties that are of interest both for fundamental science and for technological applications. The ability to achieve a high on-off current ratio is the central question in this field. Here, we propose a simple method to achieve a current on-off ratio of 10(4) by opening a transport gap in Bernal-stacked trilayer graphene.
View Article and Find Full Text PDFOxygen binding and cleavage are important for both molecular recognition and catalysis. Mn-based porphyrins in particular are used as catalysts for the epoxidation of alkenes, and in this study the homolytic cleavage of O2 by a surface-supported monolayer of Mn porphyrins on Ag(111) is demonstrated by scanning tunneling microscopy, X-ray absorption, and X-ray photoemission. As deposited, {5,10,15,20-tetraphenylporphyrinato}Mn(III)Cl (MnClTPP) adopts a saddle conformation with the average plane of its macrocycle parallel to the substrate and the axial Cl ligand pointing upward, away from the substrate.
View Article and Find Full Text PDFThe atomic structure of the cubic-SiC(001) surface during ultra-high vacuum graphene synthesis has been studied using scanning tunneling microscopy (STM) and low-energy electron diffraction. Atomically resolved STM studies prove the synthesis of a uniform, millimeter-scale graphene overlayer consisting of nanodomains rotated by ±13.5° relative to the left angle bracket 110 right angle bracket-directed boundaries.
View Article and Find Full Text PDFUnderstanding molecular switching between different charge states is crucial to further progress in molecule-based nano-electronic devices. Herein we have employed scanning tunnelling microscopy to visualize different charge states of a single C60 molecule within a molecular layer grown on the WO2/W(110) surface. The results obtained demonstrate that individual C60 molecules within the layer switch between neutral and negatively charged states in the temperature range of 220-260 K over the time scale of the experiment.
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