High-resolution radial distribution function of pure ion-implanted amorphous silicon measured using tilted-illumination selected-area electron diffraction.

High-resolution radial distribution functions of as-implanted and thermally relaxed amorphous silicon created by ion implantation were measured using tilted-illumination selected area electron diffraction at room temperature. The diffracted intensities were measured out to a maximum scattering vector 2 sin(θ)/λ of 3.3-3.