Dielectric Properties of Ultrathin CaF Ionic Crystals.

Mechanically exfoliated 2D hexagonal boron nitride (h-BN) is currently the preferred dielectric material to interact with graphene and 2D transition metal dichalcogenides in nanoelectronic devices, as they form a clean van der Waals interface. However, h-BN has a low dielectric constant (≈3.9), which in ultrascaled devices results in high leakage current and premature dielectric breakdown.

Magnetization reversal in YIG/GGG(111) nanoheterostructures grown by laser molecular beam epitaxy.

Thin (4-20 nm) yttrium iron garnet (YFeO, YIG) layers have been grown on gadolinium gallium garnet (GdGaO, GGG) 111-oriented substrates by laser molecular beam epitaxy in 700-1000 °C growth temperature range. The layers were found to have atomically flat step-and-terrace surface morphology with step height of 1.8 Å characteristic for YIG(111) surface.