Atomic force microscopy bending tests of a suspended rod-shaped object: Accounting for object fixing conditions.

The technique of atomic force microscopy (AFM) bending tests of a suspended nano-object (scroll, tube, rod) makes it possible to calculate the Young's modulus of the material it is made of based on experimental data. However, the calculation results involve a large error due to uncertain conditions (console or bridge) of fixing the test object. One of the ways to reduce this error is based on the theoretical consideration of consoles or bridges as beams with one or two ends resting on Winkler elastic foundations.

Thermal Treatment Impact on the Mechanical Properties of MgSiO(OH) Nanoscrolls.

A group of phyllosilicate nanoscrolls conjoins several hydrosilicate layered compounds with a size mismatch between octahedral and tetrahedral sheets. Among them, synthetic MgSiO(OH) chrysotile nanoscrolls (obtained via the hydrothermal method) possess high thermal stability and mechanical properties, making them prospective composite materials fillers. However, accurate determination of these nano-objects with Young's modulus remains challenging.

Dual mechanism of modulation of Na1.8 sodium channels by ouabain.

In the primary sensory neuron, ouabain activates the dual mechanism that modulates the functional activity of Na1.8 channels. Ouabain at endogenous concentrations (EO) triggers two different signaling cascades, in which the Na,K-ATPase/Src complex is the EO target and the signal transducer.

Characterization of silicon heterojunctions for solar cells.

Conductive-probe atomic force microscopy (CP-AFM) measurements reveal the existence of a conductive channel at the interface between p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) as well as at the interface between n-type a-Si:H and p-type c-Si. This is in good agreement with planar conductance measurements that show a large interface conductance. It is demonstrated that these features are related to the existence of a strong inversion layer of holes at the c-Si surface of (p) a-Si:H/(n) c-Si structures, and to a strong inversion layer of electrons at the c-Si surface of (n) a-Si:H/(p) c-Si heterojunctions.