Effects of Magnetostatic Interactions in FeNi-Based Multilayered Magnetoimpedance Elements.

Multilayered [Cu(3 nm)/FeNi(100 nm)]/Cu(150 nm)/FeNi(10 nm)/Cu(150 nm)/FeNi(10 nm)/Cu(150 nm)/[Cu(3 nm)/FeNi(100 nm)] structures were obtained by using the magnetron sputtering technique in the external in-plane magnetic field. From these, multilayer magnetoimpedance elements were fabricated in the shape of elongated stripes using the lift-off lithographic process. In order to obtain maximum magnetoimpedance (MI) sensitivity with respect to the external magnetic field, the short side of the rectangular element was oriented along the direction of the technological magnetic field applied during the multilayered structure deposition.