Seed Dibbling Method for the Growth of High-Quality Diamond on GaN.

The integration of diamond and GaN has been highly pursued for thermal management purposes as well as combining their exceptional complementary properties for power electronics applications and novel semiconductor heterostructures. However, the growth of diamond-on-GaN is challenging due to the high lattice and thermal expansion mismatches. The weak adhesion of diamond to GaN and high residual stresses after the deposition often result in the diamond film delamination or development of cracks, which hinder the subsequent device fabrication.