Inter-Layer Coupling Induced Valence Band Edge Shift in Mono- to Few-Layer MoS.

Recent progress in the synthesis of monolayer MoS, a two-dimensional direct band-gap semiconductor, is paving new pathways toward atomically thin electronics. Despite the large amount of literature, fundamental gaps remain in understanding electronic properties at the nanoscale. Here, we report a study of highly crystalline islands of MoS grown via a refined chemical vapor deposition synthesis technique.