Studies of Electrical Parameters and Thermal Stability of HiPIMS Hafnium Oxynitride (HfON) Thin Films.

This work demonstrated the optimization of HiPIMS reactive magnetron sputtering of hafnium oxynitride (HfON) thin films. During the optimization procedure, employing Taguchi orthogonal tables, the parameters of examined dielectric films were explored, utilizing optical methods (spectroscopic ellipsometry and refractometry), electrical characterization (C-V, I-V measurements of MOS structures), and structural investigation (AFM, XRD, XPS). The thermal stability of fabricated HfON layers, up to 800 °C, was also investigated.

Titanium Nitride as a Plasmonic Material from Near-Ultraviolet to Very-Long-Wavelength Infrared Range.

Titanium nitride is a well-known conductive ceramic material that has recently experienced resumed attention because of its plasmonic properties comparable to metallic gold and silver. Thus, TiN is an attractive alternative for modern and future photonic applications that require compatibility with the Complementary Metal-Oxide-Semiconductor (CMOS) technology or improved resistance to temperatures or radiation. This work demonstrates that polycrystalline TiN films sputtered on silicon at room temperature can exhibit plasmonic properties continuously from 400 nm up to 30 μm.

Investigations of Structural and Electrical Properties of ALD Films Formed with the Ozone Precursor.

The continuous development of ALD thin films demands ongoing improvements and changes toward fabricating materials with tailored properties that are suitable for different practical applications. Ozone has been recently established as a precursor, with distinct advantages over the alternative oxidizing precursors in the ALDs of advanced dielectric films. This study reports alumina (AlO) and hafnia (HfO) formation using an O source and compares the obtained structural and electrical properties.

Multifaceted phase ordering kinetics of an antiferromagnetic spin-1 condensate.

We study phase domain coarsening in the long time limit after a quench of magnetic field in a quasi one-dimensional spin-1 antiferromagnetic condensate. We observe that the growth of correlation length obeys scaling laws predicted by the two different models of phase ordering kinetics, namely the binary mixture and vector field. We derive regimes of clear realization for both of them.

Titanium Dioxide Thin Films Obtained by Atomic Layer Deposition Promotes Osteoblasts' Viability and Differentiation Potential While Inhibiting Osteoclast Activity-Potential Application for Osteoporotic Bone Regeneration.

Atomic layer deposition (ALD) technology has started to attract attention as an efficient method for obtaining bioactive, ultrathin oxide coatings. In this study, using ALD, we have created titanium dioxide (TiO) layers. The coatings were characterised in terms of physicochemical and biological properties.

Zirconium Oxide Thin Films Obtained by Atomic Layer Deposition Technology Abolish the Anti-Osteogenic Effect Resulting from miR-21 Inhibition in the Pre-Osteoblastic MC3T3 Cell Line.

Introduction: The development of the field of biomaterials engineering is rapid. Various bioactive coatings are created to improve the biocompatibility of substrates used for bone regeneration, which includes formulation of thin zirconia coatings with pro-osteogenic properties. The aim of this study was to assess the biological properties of ZrO thin films grown by Atomic Layer Deposition (ALD) technology (ZrO ).