Multiple increase in the radiative efficiency of 1060-nm laser diodes based on heterostructures with tunnel-coupled injection and a single waveguide mode.

An approach aimed at increasing the radiative efficiency in heterostructures operating in a single vertical mode at 1060 nm has been studied. Two types of heterostructures-the STJH (single tunnel junction heterostructure) and DTJH (double tunnel junction heterostructure)-have been developed to obtain the operation of a single waveguide mode of the first and second order, respectively. A multiple increase in the injection efficiency is realized by using tunnel junctions (TJs) embedded in the wide-gap barriers and placed between the active regions.

Generation of nanosecond and subnanosecond laser pulses by AlGaAs/GaAs laser-thyristor with narrow mesa stripe contact.

Lasers-thyristors with a narrow (20 μm) mesa stripe contact have been studied. It was shown that the laser peak power reaches a value of 2.5 W in the long-pulse mode at a pulse width of 13 ns.