On the Aging of OTFTs and Its Impact on PUFs Reliability.

Given the current maturity of printed technologies, Organic Thin-Film Transistors (OTFT) still show high initial variability, which can be beneficial for its exploitation in security applications. In this work, the process-related variability and aging of commercial OTFTs have been characterized to evaluate the feasibility of OTFTs-based Physical Unclonable Functions (PUFs) implementation. For our devices, -based PUFs show good uniformity and uniqueness.

Low-Power, High-Performance, Non-volatile Inkjet-Printed HfO-Based Resistive Random Access Memory: From Device to Nanoscale Characterization.

Low-power, high-performance metal-insulator-metal (MIM) non-volatile resistive memories based on HfO high- k dielectric are fabricated using a drop-on-demand inkjet printing technique as a low-cost and eco-friendly method. The characteristics of resistive switching of Pt (bottom)/HfO/Ag (top) stacks on Si/SiO substrates are investigated in order to study the bottom electrode's interaction with the HfO dielectric layer and the resulting effects on resistive switching. The devices show low Set and Reset voltages, high ON/OFF current ratio, and relatively low switching current (∼1 μA), which are comparable to the characteristics of current commercial CMOS memories.