The use of trivalent erbium (Er), typically embedded as an atomic defect in the solid-state, has widespread adoption as a dopant in telecommunication devices and shows promise as a spin-based quantum memory for quantum communication. In particular, its natural telecom C-band optical transition and spin-photon interface make it an ideal candidate for integration into existing optical fiber networks without the need for quantum frequency conversion. However, successful scaling requires a host material with few intrinsic nuclear spins, compatibility with semiconductor foundry processes, and straightforward integration with silicon photonics.
View Article and Find Full Text PDFIsolated solid-state atomic defects with telecom optical transitions are ideal quantum photon emitters and spin qubits for applications in long-distance quantum communication networks. Prototypical telecom defects, such as erbium, suffer from poor photon emission rates, requiring photonic enhancement using resonant optical cavities. Moreover, many of the traditional hosts for erbium ions are not amenable to direct incorporation with existing integrated photonics platforms, limiting scalable fabrication of qubit-based devices.
View Article and Find Full Text PDFOptically-interfaced spins in the solid state are a promising platform for quantum technologies. A crucial component of these systems is high-fidelity, projective measurement of the spin state. Here, we demonstrate single-shot spin readout of a single rare earth ion qubit, Er, which is attractive for its telecom-wavelength optical transition and compatibility with silicon nanophotonic circuits.
View Article and Find Full Text PDFWe realize a new electroplasmonic switch based upon electrically tunable exciton-plasmon interactions. The device consists of a hexagonal boron nitride (hBN)-encapsulated tungsten diselenide (WSe) monolayer on top of a single-crystalline silver substrate. The ultrasmooth silver substrate serves a dual role as the medium to support surface plasmon polaritons (SPPs) and the bottom gate electrode to tune the WSe exciton energy and brightness through electrostatic doping.
View Article and Find Full Text PDFDefect-based color centers in wide-bandgap crystalline solids are actively being explored for quantum information science, sensing, and imaging. Unfortunately, the luminescent properties of these emitters are frequently degraded by blinking and photobleaching that arise from poorly passivated host crystal surfaces. Here, a new method for stabilizing the photoluminescence and charge state of color centers based on epitaxial growth of an inorganic passivation layer is presented.
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