Chiral damping of magnetic domain walls.

Structural symmetry breaking in magnetic materials is responsible for the existence of multiferroics, current-induced spin-orbit torques and some topological magnetic structures. In this Letter we report that the structural inversion asymmetry (SIA) gives rise to a chiral damping mechanism, which is evidenced by measuring the field-driven domain-wall (DW) motion in perpendicularly magnetized asymmetric Pt/Co/Pt trilayers. The DW dynamics associated with the chiral damping and those with Dzyaloshinskii-Moriya interaction (DMI) exhibit identical spatial symmetry.

Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection.

Modern computing technology is based on writing, storing and retrieving information encoded as magnetic bits. Although the giant magnetoresistance effect has improved the electrical read out of memory elements, magnetic writing remains the object of major research efforts. Despite several reports of methods to reverse the polarity of nanosized magnets by means of local electric fields and currents, the simple reversal of a high-coercivity, single-layer ferromagnet remains a challenge.

Fast current-induced domain-wall motion controlled by the Rashba effect.

The propagation of magnetic domain walls induced by spin-polarized currents has launched new concepts for memory and logic devices. A wave of studies focusing on permalloy (NiFe) nanowires has found evidence for high domain-wall velocities (100 m s(-1); refs,), but has also exposed the drawbacks of this phenomenon for applications. Often the domain-wall displacements are not reproducible, their depinning from a thermally stable position is difficult and the domain-wall structural instability (Walker breakdown) limits the maximum velocity.

Current-driven spin torque induced by the Rashba effect in a ferromagnetic metal layer.

Methods to manipulate the magnetization of ferromagnets by means of local electric fields or current-induced spin transfer torque allow the design of integrated spintronic devices with reduced dimensions and energy consumption compared with conventional magnetic field actuation. An alternative way to induce a spin torque using an electric current has been proposed based on intrinsic spin-orbit magnetic fields and recently realized in a strained low-temperature ferromagnetic semiconductor. Here we demonstrate that strong magnetic fields can be induced in ferromagnetic metal films lacking structure inversion symmetry through the Rashba effect.