Intrinsic charge trapping in amorphous oxide films: status and challenges.

We review the current understanding of intrinsic electron and hole trapping in insulating amorphous oxide films on semiconductor and metal substrates. The experimental and theoretical evidences are provided for the existence of intrinsic deep electron and hole trap states stemming from the disorder of amorphous metal oxide networks. We start from presenting the results for amorphous (a) HfO, chosen due to the availability of highest purity amorphous films, which is vital for studying their intrinsic electronic properties.

A mechanism for Frenkel defect creation in amorphous SiO facilitated by electron injection.

Using density functional theory (DFT) calculations we demonstrate how electron injection can facilitate the creation of Frenkel defects in amorphous (a)-SiO. The precursor sites composed of wide O-Si-O bond angles in amorphous SiO act as deep electron traps and can accommodate up to two extra electrons. Trapping of two electrons at these intrinsic sites results in weakening of a Si-O bond and creates an efficient bond breaking pathway for producing neutral O vacancies and [Formula: see text] interstitial ions characterized by low transition barriers.

Role of hydrogen in volatile behaviour of defects in SiO-based electronic devices.

Charge capture and emission by point defects in gate oxides of metal-oxide-semiconductor field-effect transistors (MOSFETs) strongly affect reliability and performance of electronic devices. Recent advances in experimental techniques used for probing defect properties have led to new insights into their characteristics. In particular, these experimental data show a repeated dis- and reappearance (the so-called ) of the defect-related signals.

Hydrogen-induced rupture of strained Si─O bonds in amorphous silicon dioxide.

Using ab initio modeling we demonstrate that H atoms can break strained Si─O bonds in continuous amorphous silicon dioxide (a-SiO(2)) networks, resulting in a new defect consisting of a threefold-coordinated Si atom with an unpaired electron facing a hydroxyl group, adding to the density of dangling bond defects, such as E' centers. The energy barriers to form this defect from interstitial H atoms range between 0.5 and 1.