Publications by authors named "Akoh H"

A Mott transistor that exhibits a large switching ratio of more than two orders at room temperature is demonstrated by using the electric double layer of an ionic liquid for gating on a strongly correlated electron system SmCoO3. From the thickness dependence of the on-state channel current, we estimate the screening length of the SmCoO3 to be ∼5 nm. The good carrier confinement within the Thomas-Fermi screening length demonstrates that the SmCoO3-channel electric double layer transistor is the first candidate for a two-dimensional Mott transistor.

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A prototype Mott transistor, the electric double layer transistor with a strained CaMnO(3) thin film, is fabricated. As predicted by the strain phase diagram of electron-doped manganite films, the device with the compressively strained CaMnO(3) exhibits an immense conductivity modulation upon applying a tiny gate voltage of 2 V.

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A surface decontamination system for application in surface sensitive magnetic imaging tools, such as a spin-polarized scanning electron microscope, is described. Adsorbed contaminant is chemically decomposed with the use of active oxygen in a compact vacuum chamber mounted in a microscope. The present method is especially suitable for fragile magnetic surfaces of complex oxide materials to which the conventional physical etching widely used for magnetic metals could cause serious structural damage.

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Nonreciprocal directional dichroism, termed the optical magnetoelectric (OME) effect, has been observed in patterned superlattice (SL) composed of perovskite oxides, LaMnO3, SrMnO3, and LaAlO3. Such a tricolor SL with ferromagnetic interfaces is expected to artificially break both space-inversion and time-reversal symmetries and hence to show the OME effect. The Bragg diffraction from the grating structure with a period of 4 microm fabricated on the SL was employed to sensitively detect the OME effect, yielding the relative change of the diffracted light intensity (~0.

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A simple method to dramatically enhance the optical magnetoelectric (ME) effect, i.e., nonreciprocal directional birefringence, is proposed and demonstrated for a polar ferrimagnet GaFeO3 as a typical example.

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The optical magnetoelectric effect, which is a nonreciprocal directional dichroic response, has been demonstrated in a submicron patterned magnet by monitoring the diffracted visible or near-infrared light intensity. An artificial magnetic superstructure is composed of chevron shaped ">" islands made of the ferromagnetic permalloy Ni(80)Fe(20) with a pitch of 1 microm on silicon substrate, in which both space inversion and time reversal symmetry are broken simultaneously. On the basis of the light-polarization angle and magnetic field H dependence, and also comparing the results with the those of the submicron square patterns, we show that the optical magnetoelectric effect emerges as the finite change (approximately 10(-3) at room temperature in H of 500 Oe) of the diffracted intensity.

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Interface-selective probing of magnetism is a key issue for the design and realization of spin-electronic junction devices. Here, magnetization-induced second-harmonic generation was used to probe the local magnetic properties at the interface of the perovskite ferromagnet La(0.6)Sr(0.

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Japanese and American 5th graders (N = 593 children, 198 American and 395 Japanese) assigned credit and blame to good and bad classroom deeds and performances. Theoretically, a morality of aspiration involves assigning more credit for a good deed than blame for a corresponding bad deed; a morality of duty involves assigning more blame than credit. In both countries academic achievement norms were most consistent with aspiration, moral norms were judged as duties, and procedural norms were intermediate.

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