p-type transparent superconductivity in a layered oxide.

Development of p-type transparent conducting materials has been a challenging issue. The known p-type transparent conductors unsatisfy both of high transparency and high conductivity nor exhibit superconductivity. Here, we report on epitaxial synthesis, excellent p-type transparent conductivity, and two-dimensional superconductivity of Li NbO.

Microwave Effects on Co-Pi Cocatalysts Deposited on α-FeO for Application to Photocatalytic Oxygen Evolution.

We analyze the effects of microwave applied in the process of photoelectrochemical deposition of cobalt-based cocatalysts, Co-Pi, onto well-orientated flat α-FeO thin films, which were fabricated by pulsed laser deposition. As compared with conventional heating, microwave significantly affects the morphology, chemical composition, and photocatalytic activity of Co-Pi/α-FeO composite. A significant enhancement in photocurrent related to photocatalytic water oxidation is achieved by the Co-Pi catalyst prepared under microwave irradiation.

Dimensionality-driven insulator-metal transition in A-site excess non-stoichiometric perovskites.

Coaxing correlated materials to the proximity of the insulator-metal transition region, where electronic wavefunctions transform from localized to itinerant, is currently the subject of intensive research because of the hopes it raises for technological applications and also for its fundamental scientific significance. In general, this tuning is achieved by either chemical doping to introduce charge carriers, or external stimuli to lower the ratio of Coulomb repulsion to bandwidth. In this study, we combine experiment and theory to show that the transition from well-localized insulating states to metallicity in a Ruddlesden-Popper series, La(0.

Hydrogenation-induced surface polarity recognition and proton memory behavior at protic-ionic-liquid/oxide electric-double-layer interfaces.

The electric-double-layer (EDL) formed at liquid/solid interfaces provides a broad and interdisciplinary attraction in terms of electrochemistry, photochemistry, catalysts, energy storage, and electronics. Especially in recent years, much effort has been devoted to the fundamental understanding and practical applications of transistor configurations with EDLs because of their ability for high-density charge accumulation. However, to exploit additional new functionalities of such an emerging interface is not only of great importance but also a huge challenge.

Epitaxial Structure of (001)- and (111)-Oriented Perovskite Ferrate Films Grown by Pulsed-Laser Deposition.

The epitaxial structures of SrFeO(2.5) films grown on SrTiO(3) (001) and (111) substrates by PLD are reported. A layer-by-layer growth mode was achieved in the initial stage on both substrates.

High-throughput screening for combinatorial thin-film library of thermoelectric materials.

A high-throughput method has been developed to evaluate the Seebeck coefficient and electrical resistivity of combinatorial thin-film libraries of thermoelectric materials from room temperature to 673 K. Thin-film samples several millimeters in size were deposited on an integrated Al2O3 substrate with embedded lead wires and local heaters for measurement of the thermopower under a controlled temperature gradient. An infrared camera was used for real-time observation of the temperature difference Delta T between two electrical contacts on the sample to obtain the Seebeck coefficient.

Atomic-scale imaging of nanoengineered oxygen vacancy profiles in SrTiO3.

At the heart of modern oxide chemistry lies the recognition that beneficial (as well as deleterious) materials properties can be obtained by deliberate deviations of oxygen atom occupancy from the ideal stoichiometry. Conversely, the capability to control and confine oxygen vacancies will be important to realize the full potential of perovskite ferroelectric materials, varistors and field-effect devices. In transition metal oxides, oxygen vacancies are generally electron donors, and in strontium titanate (SrTiO3) thin films, oxygen vacancies (unlike impurity dopants) are particularly important because they tend to retain high carrier mobilities, even at high carrier densities.