Strain-Engineered 2D Materials: Challenges, Opportunities, and Future Perspectives.

Strain engineering is a powerful strategy that can strongly influence and tune the intrinsic characteristics of materials by incorporating lattice deformations. Due to atomically thin thickness, 2D materials are excellent candidates for strain engineering as they possess inherent mechanical flexibility and stretchability, which allow them to withstand large strains. The application of strain affects the atomic arrangement in the lattice of 2D material, which modify the electronic band structure.

Nonconventional Strain Engineering for Uniform Biaxial Tensile Strain in MoS Thin Film Transistors.

Strain engineering has been employed as a crucial technique to enhance the electrical properties of semiconductors, especially in Si transistor technologies. Recent theoretical investigations have suggested that strain engineering can also markedly enhance the carrier mobility of two-dimensional (2D) transition-metal dichalcogenides (TMDs). The conventional methods used in strain engineering for Si and other bulk semiconductors are difficult to adapt to ultrathin 2D TMDs.

2D Materials in Flexible Electronics: Recent Advances and Future Prospectives.

Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices.

Perovskite Light-Emitting Diode Display Based on MoS Backplane Thin-Film Transistors.

The uniform deposition of perovskite light-emitting diodes (PeLEDs) and their integration with backplane thin-film transistors (TFTs) remain challenging for large-area display applications. Herein, an active-matrix PeLED display fabricated via the heterogeneous integration of cesium lead bromide LEDs and molybdenum disulfide (MoS )-based TFTs is presented. The single-source evaporation method enables the deposition of highly uniform perovskite thin films over large areas.

Low-temperature growth of MoS on polymer and thin glass substrates for flexible electronics.

Recent advances in two-dimensional semiconductors, particularly molybdenum disulfide (MoS), have enabled the fabrication of flexible electronic devices with outstanding mechanical flexibility. Previous approaches typically involved the synthesis of MoS on a rigid substrate at a high temperature followed by the transfer to a flexible substrate onto which the device is fabricated. A recurring drawback with this methodology is the fact that flexible substrates have a lower melting temperature than the MoS growth process, and that the transfer process degrades the electronic properties of MoS.