Nanomaterials (Basel)
March 2024
The achievement of the low Gilbert damping parameter in spin dynamic modulation is attractive for spintronic devices with low energy consumption and high speed. Metallic ferromagnetic alloy Co-Fe-B is a possible candidate due to its high compatibility with spintronic technologies. Here, we report thickness-dependent damping and soft magnetism in Co-Fe-B films sandwiched between two non-magnetic layers with Co-Fe-B films up to 50 nm thick.
View Article and Find Full Text PDFCoherent spin waves possess immense potential in wave-based information computation, storage, and transmission with high fidelity and ultra-low energy consumption. However, despite their seminal importance for magnonic devices, there is a paucity of both structural prototypes and theoretical frameworks that regulate the spin current transmission and magnon hybridization mediated by coherent spin waves. Here, we demonstrate reconfigurable coherent spin current transmission, as well as magnon-magnon coupling, in a hybrid ferrimagnetic heterostructure comprising epitaxial GdFeO and YFeO insulators.
View Article and Find Full Text PDFLayered thio- and seleno-phosphate ferroelectrics, such as CuInPS, are promising building blocks for next-generation nonvolatile memory devices. However, because of the low Curie point, the CuInPS-based memory devices suffer from poor thermal stability (<42 °C). Here, exploiting the electric field-driven phase transition in the rarely studied antiferroelectric CuCrPS crystals, we develop a nonvolatile memristor showing a sizable resistive-switching ratio of ~ 1000, high switching endurance up to 20,000 cycles, low cycle-to-cycle variation, and robust thermal stability up to 120 °C.
View Article and Find Full Text PDFIn spintronics, ordered magnetic domains are important for magnetic microdevices and controlling the orientation of ordered magnetic domains is important for applications such as domain wall resistance and spin wave propagation. Although a magnetic field or a current can reorient ordered magnetic domains, an energy-efficient electric-field-driven rotation of the ordered magnetic domains remains elusive. Here, using a nanotrenched polymeric layer, we obtain ordered magnetic strip domains in Ni films on a ferroelectric substrate.
View Article and Find Full Text PDFGiant spin-orbit torque (SOT) from topological insulators (TIs) has great potential for low-power SOT-driven magnetic random-access memory (SOT-MRAM). In this work, a functional 3-terminal SOT-MRAM device is demonstrated by integrating the TI [(BiSb) Te ] with perpendicular magnetic tunnel junctions (pMTJs), where the tunneling magnetoresistance is employed for the effective reading method. An ultralow switching current density of 1.
View Article and Find Full Text PDFInsulating compensated ferrimagnets, especially hosting room-temperature compensation points, are considered promising candidates for developing ultra-high-density and ultrafast magnonic devices owing to combining the characteristics of both ferromagnets and antiferromagnets. These intriguing features become outstanding close to their compensation points. However, their spin-orbit torque (SOT)-induced magnetization switching, particularly in the vicinity of the compensation points, remains unclear.
View Article and Find Full Text PDFRecently, the interest in spin pumping (SP) has escalated from ferromagnets into antiferromagnetic systems, potentially enabling fundamental physics and magnonic applications. Compensated ferrimagnets are considered alternative platforms for bridging ferro- and antiferromagnets, but their SP and the associated magnetic damping have been largely overlooked so far despite their seminal importance for magnonics. Herein, an unconventional SP together with magnetic damping in an insulating compensated ferrimagnet Gd Fe O (GdIG) is reported.
View Article and Find Full Text PDFGiant spin-orbit torque (SOT) from topological insulators (TIs) provides an energy efficient writing method for magnetic memory, which, however, is still premature for practical applications due to the challenge of the integration with magnetic tunnel junctions (MTJs). Here, we demonstrate a functional TI-MTJ device that could become the core element of the future energy-efficient spintronic devices, such as SOT-based magnetic random-access memory (SOT-MRAM). The state-of-the-art tunneling magnetoresistance (TMR) ratio of 102% and the ultralow switching current density of 1.
View Article and Find Full Text PDFNonvolatile electrical control of magnetism is crucial for developing energy-efficient magnetic memory. Based on strain-mediated magnetoelectric coupling, a multiferroic heterostructure containing an isolated magnet requires nonvolatile strain to achieve this control. However, the magnetization response of an interacting magnet to strain remains elusive.
View Article and Find Full Text PDFThe magnetic tunneling junction (MTJ) controlled by electric field as an alternate approach for energy efficiency is the highlight for nonvolatile RAM, while there is still a lack of research on resistance manipulation with the electric field in nanoscale MTJs. In this study, we integrated nanoscale MTJs on the (011) orientated Pb(MgNb)TiO (PMN-PT) ferroelectric substrates and systematically investigated the magnetoresistance as a function of the magnetic field and electric field. A single domain state of the nanoscale MTJ was demonstrated by the experimental result and theoretical simulation.
View Article and Find Full Text PDFMaterials (Basel)
August 2021
Electric-field control of magnetism is significant for the next generation of large-capacity and low-power data storage technology. In this regard, the renaissance of a multiferroic compound provides an elegant platform owing to the coexistence and coupling of ferroelectric (FE) and magnetic orders. However, the scarcity of single-phase multiferroics at room temperature spurs zealous research in pursuit of composite systems combining a ferromagnet with FE or piezoelectric materials.
View Article and Find Full Text PDFOne of the motivations for multiferroics research is to find an energy-efficient solution to spintronic applications, such as the solely electrical control of magnetic tunnel junctions. Here, we integrate spintronics and multiferroics by depositing MgO-based magnetic tunnel junctions on ferroelectric substrate. We fabricate two pairs of electrodes on the ferroelectric substrate to generate localized strain by applying voltage.
View Article and Find Full Text PDFACS Appl Mater Interfaces
December 2019
Perpendicular magnetic anisotropy is important for increasing the information storage density in the perpendicular magnetic recording media, and for rare-earth-transition-metal alloys with bulk perpendicular magnetic anisotropy that generate great research interest due to their abundant interesting phenomena, such as fast domain wall motion and skyrmion. Here, we deposit amorphous GdFe ferrimagnetic films on Pb(MgNb)TiO ferroelectric substrate and investigate the effect of electric-field-induced piezostrain on its bulk perpendicular magnetic anisotropy. The anomalous Hall effect and polar Kerr image measurements suggest an enhanced bulk perpendicular magnetic anisotropy by electric field, which originates from a positive magnetoelastic anisotropy due to the positive magnetostriction coefficient of the GdFe film and the electric-field-induced tensile strain along the axis in Pb(MgNb)TiO ferroelectric substrate.
View Article and Find Full Text PDFElectrically switchable magnetization is considered a milestone in the development of ultralow power spintronic devices, and it has been a long sought-after goal for electric-field control of magnetoresistance in magnetic tunnel junctions with ultralow power consumption. Here, through integrating spintronics and multiferroics, we investigate MgO-based magnetic tunnel junctions on ferroelectric substrate with a high tunnel magnetoresistance ratio of 235%. A giant, reversible and nonvolatile electric-field manipulation of magnetoresistance to about 55% is realized at room temperature without the assistance of a magnetic field.
View Article and Find Full Text PDFStrain-mediated ferromagnetic/ferroelectric (FE) heterostructures have played an important role in multiferroic materials to investigate the electric-field control of magnetism in the past decade, due to their excellent performances, such as room-temperature operation and large magnetoelectric (ME) coupling effect. Because of the different FE-switching-originated strain behaviors and varied interfacial coupling effect, both loop-like (nonvolatile) and butterfly-like (volatile) converse ME effects have been reported. Here, we investigate the electric-field control of magnetism in a multiferroic heterostructure composed of a polycrystalline Fe thin film and a Pb(MgNb)TiO single crystal, and the experimental results exhibit complex behaviors, suggesting the coexistence of volatile and nonvolatile converse ME effects.
View Article and Find Full Text PDFThe resistive switching (RS) effect in various materials has attracted much attention due to its interesting physics and potential for applications. NiO is an important system and its RS effect has been generally explained by the formation/rupture of Ni-related conducting filaments. These filaments are unique since they are formed by an electroforming process, so it is interesting to explore their magnetoresistance (MR) behavior, which can also shed light on unsolved issues such as the nature of the filaments and their evolution in the RS process, and this behavior is also important for multifunctional devices.
View Article and Find Full Text PDFWe report electric-field control of magnetism of (Co/Pt) multilayers involving perpendicular magnetic anisotropy with different Co-layer thicknesses grown on Pb(Mg,Nb)O-PbTiO (PMN-PT) FE substrates. For the first time, electric-field control of the interface magnetic anisotropy, which results in the spin reorientation transition, was demonstrated. The electric-field-induced changes of the bulk and interface magnetic anisotropies can be understood by considering the strain-induced change of magnetoelastic energy and weakening of Pt 5d-Co 3d hybridization, respectively.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2017
Intrinsic spatial inhomogeneity or phase separation in cuprates, manganites, etc., related to electronic and/or magnetic properties, has attracted much attention due to its significance in fundamental physics and applications. Here we use scanning Kerr microscopy and scanning electron microscopy with polarization analysis with in situ electric fields to reveal the existence of intrinsic spatial inhomogeneity of the magnetic response to an electric field on a mesoscale with the coexistence of looplike (nonvolatile) and butterfly-like (volatile) behaviors in CoFeB/Pb(MgNb)TiO ferromagnetic/ferroelectric (FM/FE) multiferroic heterostructures.
View Article and Find Full Text PDFWe report ferroelectricity and self-polarization in the (001) oriented ultrathin relaxor ferroelectric PMN-PT films grown on Nb-SrTiO3, SrRuO3 and La0.7Sr0.3MnO3, respectively.
View Article and Find Full Text PDFElectric-field control of magnetism in multiferroic heterostructures composed of Co40Fe40B20 (CoFeB) and (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-xPT) with different ferroelectric phases via changing composition and temperature is explored. It is demonstrated that the nonvolatile looplike bipolar-electric-field-controlled magnetization, previously found in the CoFeB/PMN-xPT heterostructures with PMN-xPT in the rhombohedral (R) phase around the morphotropic phase boundary (MPB), also occurs for PMN-xPTs with both R phase (far away from MPB) and monoclinic (M) phase, suggesting that the phenomenon is the common feature of CoFeB/PMN-xPT multiferroic heterostructures for PMN-xPT with different phases. The magnitude of the effect changes with increasing temperature and volatile bipolar-electric-field-controlled magnetization with a butterflylike behavior occurs when the ferroelectric phase changes to the tetragonal phase (T).
View Article and Find Full Text PDFThe combination of exchange-biased systems and ferroelectric materials offers a simple and effective way to investigate the angular dependence of exchange bias using one sample with electric-field-induced competing anisotropies. A reversible electric-field-controlled magnetization reversal at zero magnetic field is also realized through optimizing the anisotropy configuration, holding promising applications for ultralow power magnetoelectric devices.
View Article and Find Full Text PDFResistive switching effect in conductor/insulator/conductor thin-film stacks is promising for resistance random access memory with high-density, fast speed, low power dissipation and high endurance, as well as novel computer logic architectures. NiO is a model system for the resistive switching effect and the formation/rupture of Ni nanofilaments is considered to be essential. However, it is not clear how the nanofilaments evolve in the switching process.
View Article and Find Full Text PDFStrain has been widely used to manipulate the properties of various kinds of materials, such as ferroelectrics, semiconductors, superconductors, magnetic materials, and "strain engineering" has become a very active field. For strain-based information storage, the non-volatile strain is very useful and highly desired. However, in most cases, the strain induced by converse piezoelectric effect is volatile.
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