Effect of Average Grain Size on the Uniformity and Ferroelectricity of BTO/PSX Thin Films Processed by Low-Temperature Solution Method.

In this study, we utilized 50 nm BaTiO (BTO) nanoparticles and polysiloxane (PSX) with a higher concentration of methyl and silica groups to fabricate insulating layers at a low curing temperature of 100 °C using a solution-based method. This approach aims to enhance film uniformity while retaining the ferroelectric properties. Consequently, we maintained a minimal leakage current in thin-film transistors (TFTs) while achieving transfer characteristics characterized by a distinct hysteresis.

High- Solution-Processed Barium Titanate/Polysiloxane Nanocomposite for Low-Temperature Ferroelectric Thin-Film Transistors.

Ferroelectric nanoparticles have attracted much attention for numerous electronic applications owing to their nanoscale structure and size-dependent behavior. Barium titanate (BTO) nanoparticles with two different sizes (20 and 100 nm) were synthesized and mixed with a polysiloxane (PSX) polymer forming a nanocomposite solution for high- nanodielectric films. Transition from the ferroelectric to paraelectric phase of BTO with different nanoparticle dimensions was evaluated through variable-temperature X-ray diffraction measurement accompanied by electrical analysis using capacitor structures.